Details, datasheet, quote on part number: SFN330
PartSFN330
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionDescription = Power MOSFET Transistors 400 Volt N. Channel ;; Chip Type = SVN405 ;; ID(CONT.) a = 5.5 ;; VGS(th) Min/max = 2.0-4.0 ;; RDS(on) Max ( W) = 1.0 ;; TD (on) MAX(ns) = 30 ;; TR (on) MAX(ns) = 35 ;; TD (off) MAX(ns) = 55 ;; TF Max (ns) = 35 ;; Pdmax (W) = 75 ;; Case Type = TO-3
CompanySolitron Devices, Inc.
 
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Some Part number from the same manufacture Solitron Devices, Inc.
SFN350 Description = Low Power Field Effect Transistor ;; Case Style = TO3 ;; Geometry = SVN415 ;; Page Number = E60
SFN430 Description = Power MOSFET Transistors 500 Volt N Channel ;; Chip Type = SVN405 ;; ID(CONT.) a = 4.5 ;; VGS(th) Min/max = 2.0-4.0 ;; RDS(on) Max ( W) = 1.5 ;; TD (on) MAX(ns) = 30 ;; TR (on) MAX(ns) = 30 ;; TD (off)
SFN450 Description = Low Power Field Effect Transistor ;; Case Style = TO3 ;; Geometry = SVN415 ;; Page Number = E60
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SNFS061 Description = Power MOSFET Transistors 60 Volt N Channel ;; Chip Type = SVN101 ;; ID(CONT.) a = 1.2 ;; VGS(th) Min/max = 2.0-4.0 ;; RDS(on) Max ( W) = 1.500 ;; TD (on) MAX(ns) = 20 ;; TR (on) MAX(ns) = 25 ;; TD (off)
SPD1205 Vrvolts = 50 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 200 ;; Case Type = DO-4 ;; Chip
SPD1210 Vrvolts = 100 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 200 ;; Case Type = DO-4 ;; Chip
SPD1220 Vrvolts = 200 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 200 ;; Case Type = DO-4 ;; Chip
SPD1230 Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 200 ;; Case Type = DO-4 ;; Chip
SPD2005 Vrvolts = 50 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD2010 Vrvolts = 100 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD2020 Vrvolts = 200 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD2030 Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD605 Vrvolts = 50 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.100 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 150 ;; Case Type = DO-4 ;; Chip
SPD610 Vrvolts = 100 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.100 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 150 ;; Case Type = DO-4 ;; Chip
SPD620 Vrvolts = 200 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.100 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 150 ;; Case Type = DO-4 ;; Chip
SPD630 Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.100 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 150 ;; Case Type = DO-4 ;; Chip

191XC004 : Vceomin. Volts = 60 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 0.50 ;; Page No. = 78

SDF044JAAEHSB : 30 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.0400 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDF250JAAEHU1Z : 25 A, 200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.1000 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDF320JAASGD1N : 3.3 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 400 volts ; rDS(on): 1.8 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDF330JABVHU1N : 5.5 A, 400 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 400 volts ; rDS(on): 1.1 ohms ; Number of units in IC: 1

SDFE22JABSHU1N : 1.6 A, 800 V, 7.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 800 volts ; rDS(on): 7.8 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDFE22JABVHD1N : 1.6 A, 800 V, 7.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 800 volts ; rDS(on): 7.8 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDR08400JFBVND1 : 8 A, 400 V, SILICON, RECTIFIER DIODE Specifications: Number of Diodes: 1 ; VRRM: 400 volts ; IF: 8000 mA ; trr: 0.0350 ns

SDS10100JABSJU : 10 A, 100 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 10000 mA ; VRRM: 100 volts

SDS10100JFBSLS : 10 A, 100 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 10000 mA ; VRRM: 100 volts

SDS75045JEBZKD1 : 75 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 75000 mA ; VRRM: 45 volts

 
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