Details, datasheet, quote on part number: SFNF061
PartSFNF061
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs)
DescriptionDescription = Low Power Field Effect Transistor ;; Case Style = TO3 ;; Geometry = SVN105 ;; Page Number = E59
CompanySolitron Devices, Inc.
DatasheetDownload SFNF061 datasheet
  
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SFNS201
Some Part number from the same manufacture Solitron Devices, Inc.
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SNFS061 Description = Power MOSFET Transistors 60 Volt N Channel ;; Chip Type = SVN101 ;; ID(CONT.) a = 1.2 ;; VGS(th) Min/max = 2.0-4.0 ;; RDS(on) Max ( W) = 1.500 ;; TD (on) MAX(ns) = 20 ;; TR (on) MAX(ns) = 25 ;; TD (off)
SPD1205 Vrvolts = 50 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 200 ;; Case Type = DO-4 ;; Chip
SPD1210 Vrvolts = 100 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 200 ;; Case Type = DO-4 ;; Chip
SPD1220 Vrvolts = 200 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 200 ;; Case Type = DO-4 ;; Chip
SPD1230 Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 200 ;; Case Type = DO-4 ;; Chip
SPD2005 Vrvolts = 50 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD2010 Vrvolts = 100 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD2020 Vrvolts = 200 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD2030 Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD605 Vrvolts = 50 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.100 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 150 ;; Case Type = DO-4 ;; Chip
SPD610 Vrvolts = 100 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.100 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 150 ;; Case Type = DO-4 ;; Chip
SPD620 Vrvolts = 200 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.100 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 150 ;; Case Type = DO-4 ;; Chip
SPD630 Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.100 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 150 ;; Case Type = DO-4 ;; Chip
SPDA12230 Description = Planar Dual Fast Recovery Rectifiers ;; Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.01 ;; Vrrated TJ = 100 C Mamps = 0.1 ;; TRR Max NS = 200 ;; IF(surge)
SPDA20205 Description = Planar Dual Fast Recovery Rectifiers ;; Vrvolts = 50 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.01 ;; Vrrated TJ = 100 C Mamps = 0.1 ;; TRR Max NS = 300 ;; IF(surge)
SPDA20210 Description = Planar Dual Fast Recovery Rectifiers ;; Vrvolts = 100 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.01 ;; Vrrated TJ = 100 C Mamps = 0.1 ;; TRR Max NS = 300 ;; IF(surge)

2N5610 : Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 70

SDT3428 : Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 70

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SDF1NA60JAAXHD1Z : 1.5 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 6 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

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SDF4N90JABSGSZ : 4 A, 900 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 900 volts ; rDS(on): 2.4 ohms ; Number of units in IC: 1

SDF50NA20GBPZD1B : 50 A, 200 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.0500 ohms ; Number of units in IC: 2

SDR08400JDASJD : 8 A, 400 V, SILICON, RECTIFIER DIODE Specifications: Number of Diodes: 1 ; VRRM: 400 volts ; IF: 8000 mA ; trr: 0.0350 ns

SDS30045JEAXLU : 30 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 30000 mA ; VRRM: 45 volts

SDS60045JABXNU : 60 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 60000 mA ; VRRM: 45 volts

 
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