Details, datasheet, quote on part number: SFNO065
PartSFNO065
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs)
DescriptionDescription = Low Power Field Effect Transistor ;; Case Style = TO3 ;; Geometry = SVN105 ;; Page Number = E59
CompanySolitron Devices, Inc.
DatasheetDownload SFNO065 datasheet
  
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Some Part number from the same manufacture Solitron Devices, Inc.
SFNS061 Description = Low Power Field Effect Transistor ;; Case Style = TO3 ;; Geometry = SVN105 ;; Page Number = E59
SNFS061 Description = Power MOSFET Transistors 60 Volt N Channel ;; Chip Type = SVN101 ;; ID(CONT.) a = 1.2 ;; VGS(th) Min/max = 2.0-4.0 ;; RDS(on) Max ( W) = 1.500 ;; TD (on) MAX(ns) = 20 ;; TR (on) MAX(ns) = 25 ;; TD (off)
SPD1205 Vrvolts = 50 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 200 ;; Case Type = DO-4 ;; Chip
SPD1210 Vrvolts = 100 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 200 ;; Case Type = DO-4 ;; Chip
SPD1220 Vrvolts = 200 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 200 ;; Case Type = DO-4 ;; Chip
SPD1230 Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 200 ;; Case Type = DO-4 ;; Chip
SPD2005 Vrvolts = 50 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD2010 Vrvolts = 100 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD2020 Vrvolts = 200 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD2030 Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD605 Vrvolts = 50 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.100 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 150 ;; Case Type = DO-4 ;; Chip
SPD610 Vrvolts = 100 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.100 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 150 ;; Case Type = DO-4 ;; Chip
SPD620 Vrvolts = 200 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.100 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 150 ;; Case Type = DO-4 ;; Chip
SPD630 Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.100 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 150 ;; Case Type = DO-4 ;; Chip
SPDA12230 Description = Planar Dual Fast Recovery Rectifiers ;; Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.01 ;; Vrrated TJ = 100 C Mamps = 0.1 ;; TRR Max NS = 200 ;; IF(surge)
SPDA20205 Description = Planar Dual Fast Recovery Rectifiers ;; Vrvolts = 50 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.01 ;; Vrrated TJ = 100 C Mamps = 0.1 ;; TRR Max NS = 300 ;; IF(surge)
SPDA20210 Description = Planar Dual Fast Recovery Rectifiers ;; Vrvolts = 100 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.01 ;; Vrrated TJ = 100 C Mamps = 0.1 ;; TRR Max NS = 300 ;; IF(surge)
SPDA20220 Description = Planar Dual Fast Recovery Rectifiers ;; Vrvolts = 200 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.01 ;; Vrrated TJ = 100 C Mamps = 0.1 ;; TRR Max NS = 300 ;; IF(surge)
SPDA20230 Description = Planar Dual Fast Recovery Rectifiers ;; Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.01 ;; Vrrated TJ = 100 C Mamps = 0.1 ;; TRR Max NS = 300 ;; IF(surge)
SPDA6205 Description = Planar Dual Fast Recovery Rectifiers ;; Vrvolts = 50 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.01 ;; Vrrated TJ = 100 C Mamps = 0.1 ;; TRR Max NS = 200 ;; IF(surge)
SPDA6210 Description = Planar Dual Fast Recovery Rectifiers ;; Vrvolts = 100 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.01 ;; Vrrated TJ = 100 C Mamps = 0.1 ;; TRR Max NS = 200 ;; IF(surge)

230XC006 : Vceomin. Volts = 60 ;; Hfemin. = 1K ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 92

500XC001 : Chip VR Min.volts = 50 ;; VF @Max. Volts = 1.2 ;; 1FAMPS = 1.5 ;; TRR Nsec = 200 ;; Page No. = 120

SDF054JAAEGU1Z : 30 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.0220 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDF10N100JECSGSN : 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 1000 volts ; rDS(on): 1.2 ohms ; Number of units in IC: 1

SDF24N50GAFVGSB : 24 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 volts ; rDS(on): 0.2500 ohms ; Number of units in IC: 1

SDF2N100JAAXHSZ : 2 A, 1000 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 1000 volts ; rDS(on): 6 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDF430JABEHU1B : 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 volts ; rDS(on): 1.5 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDF430JDAVGSN : 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 volts ; rDS(on): 1.5 ohms ; Number of units in IC: 1

SDF9130JAAEGD1B : 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.3000 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDF9240JABVGD1N : 11 A, 200 V, 0.51 ohm, P-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.5100 ohms ; Number of units in IC: 1

SDF9N100JEBVGD1N : 9 A, 1000 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 1000 volts ; rDS(on): 1.4 ohms ; Number of units in IC: 1

SDS10045JFAVMU : 10 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Package: TO-257AA, 3 PIN ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 10000 mA ; VRRM: 45 volts

 
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