Details, datasheet, quote on part number: SPD2010
PartSPD2010
CategoryDiscrete => Diodes & Rectifiers => Recovery Rectifiers
DescriptionVrvolts = 100 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip Type = 503
CompanySolitron Devices, Inc.
 
  
Some Part number from the same manufacture Solitron Devices, Inc.
SPD2020 Vrvolts = 200 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD2030 Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD605 Vrvolts = 50 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.100 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 150 ;; Case Type = DO-4 ;; Chip
SPD610 Vrvolts = 100 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.100 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 150 ;; Case Type = DO-4 ;; Chip
SPD620 Vrvolts = 200 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.100 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 150 ;; Case Type = DO-4 ;; Chip
SPD630 Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.100 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 150 ;; Case Type = DO-4 ;; Chip
SPDA12230 Description = Planar Dual Fast Recovery Rectifiers ;; Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.01 ;; Vrrated TJ = 100 C Mamps = 0.1 ;; TRR Max NS = 200 ;; IF(surge)
SPDA20205 Description = Planar Dual Fast Recovery Rectifiers ;; Vrvolts = 50 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.01 ;; Vrrated TJ = 100 C Mamps = 0.1 ;; TRR Max NS = 300 ;; IF(surge)
SPDA20210 Description = Planar Dual Fast Recovery Rectifiers ;; Vrvolts = 100 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.01 ;; Vrrated TJ = 100 C Mamps = 0.1 ;; TRR Max NS = 300 ;; IF(surge)
SPDA20220 Description = Planar Dual Fast Recovery Rectifiers ;; Vrvolts = 200 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.01 ;; Vrrated TJ = 100 C Mamps = 0.1 ;; TRR Max NS = 300 ;; IF(surge)
SPDA20230 Description = Planar Dual Fast Recovery Rectifiers ;; Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.01 ;; Vrrated TJ = 100 C Mamps = 0.1 ;; TRR Max NS = 300 ;; IF(surge)
SPDA6205 Description = Planar Dual Fast Recovery Rectifiers ;; Vrvolts = 50 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.01 ;; Vrrated TJ = 100 C Mamps = 0.1 ;; TRR Max NS = 200 ;; IF(surge)
SPDA6210 Description = Planar Dual Fast Recovery Rectifiers ;; Vrvolts = 100 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.01 ;; Vrrated TJ = 100 C Mamps = 0.1 ;; TRR Max NS = 200 ;; IF(surge)
SPDA6220 Description = Planar Dual Fast Recovery Rectifiers ;; Vrvolts = 200 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.01 ;; Vrrated TJ = 100 C Mamps = 0.1 ;; TRR Max NS = 200 ;; IF(surge)
SPDA6230 Description = Planar Dual Fast Recovery Rectifiers ;; Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.01 ;; Vrrated TJ = 100 C Mamps = 0.1 ;; TRR Max NS = 200 ;; IF(surge)
SU2080 Description = Low Power Field Effect Transistor ;; Case Style = TO72 ;; Geometry = DMN113.3 ;; Page Number = E14+E15
TIS58 Description = Low Power Field Effect Transistor ;; Casestyle (TO-) = 72 ;; Geometry = FN2.5 ;; Bvdgoor BVGSS Min (V) = 25 ;; Cissmax (pF) = 8.0 ;; Crssmax (pF) = 4.0 ;; Vgs(off)min (V) = - ;; Vgs(off)max
TIS73 Description = Low Power Field Effect Transistor ;; Case Style = TO18 ;; Geometry = FN7.1 ;; Page Number = E36+E37
TIS88A Description = Low Power Field Effect Transistor ;; Casestyle (TO-) = 72 ;; Geometry = FN2.5 ;; Bvdgoor BVGSS Min (V) = 25 ;; Cissmax (pF) = 8.0 ;; Crssmax (pF) = 4.0 ;; Vgs(off)min (V) = - ;; Vgs(off)max
U1897E Description = Low Power Field Effect Transistor ;; Casestyle (TO-) = 92 ;; Geometry = FN71.1 ;; Bvdgoor BVGSS Min (V) = 25 ;; Cissmax (pF) = 5.5 ;; Crssmax (pF) = 1.7 ;; Vgs(off)min (V) = 0.0 ;; Vgs(off)max
U1994E Description = Low Power Field Effect Transistor ;; Casestyle (TO-) = 72 ;; Geometry = FN2.5 ;; Bvdgoor BVGSS Min (V) = 25 ;; Cissmax (pF) = 8.0 ;; Crssmax (pF) = 4.0 ;; Vgs(off)min (V) = - ;; Vgs(off)max

SDF11N90GAFVGSN : 11 A, 900 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 900 volts ; rDS(on): 0.9500 ohms ; Number of units in IC: 1

SDF15N60GAFXHD1N : 15 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 0.5000 ohms ; Number of units in IC: 1

SDF20N60JECEGD1N : 20 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 0.3500 ohms ; Number of units in IC: 1

SDF220JABXHD1B : 5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.8000 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDF430JABXHSB : 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 volts ; rDS(on): 1.5 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDF4N90JAAXHU1Z : 4 A, 900 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 900 volts ; rDS(on): 2.4 ohms ; Number of units in IC: 1

SDF4NA100JABSGSB : 4.4 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 1000 volts ; rDS(on): 4 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDF9N100JEAVGU1B : 9 A, 1000 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 1000 volts ; rDS(on): 1.4 ohms ; Number of units in IC: 1

SDR30400JEAWKD1 : 30 A, 400 V, SILICON, RECTIFIER DIODE Specifications: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, ULTRA FAST RECOVERY ; IF: 30000 mA ; Pin Count: 3 ; Number of Diodes: 2

SDS10100JFBXJU1 : 10 A, 100 V, SILICON, RECTIFIER DIODE Specifications: Arrangement: Common Anode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 10000 mA ; Pin Count: 3 ; Number of Diodes: 2

SDS60045JEBSLD1 : 60 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 60000 mA ; VRRM: 45 volts

SDS60045JEBWKD : 60 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 60000 mA ; VRRM: 45 volts

 
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