Details, datasheet, quote on part number: DB-55008-500
PartDB-55008-500
CategoryRF & Microwaves => Amplifiers => Power Amplifiers
DescriptionRF POWER amplifier using 1 x PD55008 N-Channel enhancement-mode lateral MOSFETs
CompanyST Microelectronics, Inc.
DatasheetDownload DB-55008-500 datasheet
  

 

Features, Applications
RF POWER amplifier using x PD55008 N-Channel enhancement-mode lateral MOSFETs

Excellent thermal stability Frequency: - 500MHz Supply voltage: 12.5V Output power: 8W Efficiency: - 54% Load mismatch: 20:1 Beo free amplifier

Description

The is a common source NChannel Enhancement-Mode Lateral Field Effect RF power amplifer designed as driver for UHF Mobile radio applications

Electrical characteristics. 4 Typical performance. 5 Test circuit. 8 Circuit layout. 9 Mounting indications. 11 Package mechanical data. 13 Revision history. 17

Symbol VDD ID TCASE TA Supply voltage Drain current Operating case temperature Max. ambient temperature


 

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