|Category||RF & Microwaves => Amplifiers => Power Amplifiers|
|Description||RF POWER amplifier using 1 x PD55008 N-Channel enhancement-mode lateral MOSFETs|
|Company||ST Microelectronics, Inc.|
|Datasheet||Download DB-55008-500 datasheet
|RF POWER amplifier using x PD55008 N-Channel enhancement-mode lateral MOSFETs
Excellent thermal stability Frequency: - 500MHz Supply voltage: 12.5V Output power: 8W Efficiency: - 54% Load mismatch: 20:1 Beo free amplifierDescription
The is a common source NChannel Enhancement-Mode Lateral Field Effect RF power amplifer designed as driver for UHF Mobile radio applications
Electrical characteristics. 4 Typical performance. 5 Test circuit. 8 Circuit layout. 9 Mounting indications. 11 Package mechanical data. 13 Revision history. 17
Symbol VDD ID TCASE TA Supply voltage Drain current Operating case temperature Max. ambient temperature
|Some Part number from the same manufacture ST Microelectronics, Inc.|
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RZ22A : Zener Diodes Diodes Zener
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LM4041AELT-1.2 : Pmic - Voltage Reference Integrated Circuit (ics); IC VREF SHUNT 0.1% PREC SOT23-3 Specifications: Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
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1SV262 : VR (v) = 34 ;; Ir (nA) = 10 ;; CT(1) (pF) = 33 to 38 ;; CT(2) (pF) = 2.6 to 3 ;; CT(1)/CT(2) = 12 ;; .rs(Typ.) Ohms = 0.6 ;; Package = Usc ;; Application = VHF Tuning (CATV).
854670 : = Filter - STD Low-loss ;; Frequency (MHz) = 70 ;; Bandwidth (MHz) = 20 ;; Insertion Loss (dB) = 15.0 Max ;; Modes of Operation = se ;; Package (mm) = 13.3 X 6.5.
A70-1 : 10 to 250 MHZ TO-8 Cascadable Amplifier. TO 250 MHz TO-8 CASCADABLE AMPLIFIER AVAILABLE IN SURFACE MOUNT LOW NOISE 1.8 dB (TYP.) HIGH EFFICIENCY +14 dBm (TYP.) OUTPUT POWER 15 mA (TYP.) Characteristics Frequency Small Signal Gain (min.) Gain Flatness (max.) Reverse Isolation Noise Figure (max.) Power Output 1 dB comp. (min.) IP3 IP2 Second Order Harmonic IP VSWR Input / Output (max.) DC Current.
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AT002S3-11 : GAAS 35 DB ic Voltage Variable Single Control Attenuator 0.4-2.5 GHZ. GaAs dB IC Voltage Variable Single Control Attenuator 0.42.5 GHz s Single Positive Control Voltage 35 dB Attenuation Range s 8 Lead Hermetic Surface Mount Package s Capable of Meeting MIL-STD Requirements5 The is a GaAs IC FET absorptive bridged "T" attenuator. This attenuator operates from 0.42.5 GHz and provides dB of attenuation. The key feature.
BX6510 : Frequency (MHz) = 5 - 500 ;; Gain (Typ/Min) (dB) = 16.5 / 15.5 ;; Noise Figure (Typ/Max) (dB) = 2.5 / 3.5 ;; P1dB Comp Point (Typ/Min) (dBm) = +3 / +1 ;; 3rd Order Intercept (Typ) (dBm) = +15 ;; 2nd Order Intercept (Typ) (dBm) = +17 ;; DC Power (Typ) (V/mA) = +15 / +10 ;; Package = Package = Package = 4 Pin TO-8 Package = Surface Mount Package = Flatpack.
CH-140 : 20 DB, Directional Coupler, 5 - 1000 MHZ. Broadband Flat Coupling 0.3 dB Typical Insertion Loss 30 dB Typical Directivity MIL-STD-883 Screening Available Directional Couplers offer the ability to couple the power in one direction. Parameter Coupling Flatness VSWR Directivity Main Line Loss 2 Input Power Internal Power Dissipation Test Conditions Input to Output All Ports Both Directions - 800 MHz - 1000.
CHR2293-99F : Operational RF Frequency = 24-30GHz ;; Operational lo Frequency = 9.25-12.75GHz ;; If Bandwidth = 0.25-1.5GHz ;; Conversion Gain = +11dB ;; Lo Input Power = +10dBm ;; P-1dB = -8dBm ;; Case = Die.
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F2041 : Power. Pout W = 15 ;; Freq MHZ = 1000 ;; Gain DB = 10 ;; Theta JC = 2.5 ;; GM Mho = 0.6 ;; Idsat a = 3.6 ;; Ciss PF = 27 ;; CRSS PF = 3 ;; Coss PF = 18 ;; Die = 3+3 ;; Style = Gemini ;; PKG = ak.
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S-AU50H : Power Modules. Package Dimensions = 5-23E ;; Output Power po (W) = 6.5 ;; Input Power pi (W) = 0.05 ;; Frequency Range .f (MHz) = 470 to 520 ;; VCC (V) = 4/9.6 ;; Applications = Business.
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ATR2406 : Single chip RF-transceiver The ATR2406 is a single chip RF-transceiver intended for applications in the 2.4 GHz ISM band. The QFN32 packaged IC is a complete transceiver including image rejection mixer, low IF filter, FM demodulator, RSSI, TX preamplifier, power-ramping generator for external power amplifier, integrated synthesizer, and a fully integrated.
MW7IC2725NR1 : RF Power Field Effect Transistors N-Channel Enhancement -Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications..
MMG3004NT1 : Heterojunction Bipolar Transistor Technology (InGaP HBT) Heterojunction Bipolar Transistor Technology (InGaP HBT).