|Category||RF & Microwaves => Transistors => FETs => LDMOS => Demo Boards->Power|
|Description||12W / 12V / 875-915 MHZ pa Using 1X PD55015S|
|Company||ST Microelectronics, Inc.|
|Datasheet||Download DB-915-12W datasheet
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT 12 W min. with 12 dB gain over - 915 MHz 10:1 LOAD VSWR CAPABILITY BeO FREE AMPLIFIER.
DESCRIPTION The is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed as booster for GSM-R applications. The DB-915-12W is designed in cooperation with Européenne de Télécommunications S.A (www.etsa.fr), for high gain and broadband performance operating in common source mode 12 V, capable of withstanding load mismatch to 10:1 all phases and with harmonics lower than 30 dBc.
Symbol VDD ID PDISS TCASE Tamb Supply voltage Drain Current Power Dissipation at TCASE +85 °C Operating Case Temperature Max. Ambient Temperature Parameter Value +85 +55 Unit A W
Symbol FREQ. Gain P1dB Flatness at P1dB IRTL Harmonic VSWR Spurious IMD3 Frequency Range POUT 12 W Over frequency range: - 915 MHz Over frequency range and @ POUT 12 W POUT from W P1dB Input return Loss POUT from to 12W POUT 12 W Load Mismatch all phases @ POUT W 10:1 VSWR all phases and POUT from 12 W POUT = 12 WPEP -76 -25 dBc Test Conditions Min. Typ. Max. 915 Unit MHz % dB dBc
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