|Category||RF & Microwaves => Transistors => FETs => LDMOS => Demo Boards->Power|
|Description||90W / 26V / 925-960 MHZ pa Using 2X PD57060S|
|Company||ST Microelectronics, Inc.|
|Datasheet||Download DB-960-90W datasheet
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT 90 W min. with 13 dB gain over 925-960 MHz 10:1 LOAD VSWR CAPABILITY BeO FREE AMPLIFIER.
DESCRIPTION The is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM/GPRS/EDGE base station applications. The DB-960-90W is designed in cooperation with Europeenne de Telecomunications S.A. (www.etsa.rf), for high gain and broadband performance operating in common source mode 26 V, capable of withstanding load mismatch to 10:1 all phases and with harmonics lower than 30 dBc.
Symbol VDD ID PDISS TCASE Pamb Supply voltage Drain Current Power Diss. at Tcase = +85°C Operating Case Temperature Max. Ambient Temperature Parameter Value +85 +55 Unit A W
Symbol FREQ. Gain P1dB Flatness at P1dB IRTL Harmonic VSWR Spurious IMD3 Frequency Range POUT 90 W Over frequency range: - 960 MHz Over frequency range and @ POUT 90 W POUT from W P1dB Input return Loss POUT from 90 W POUT 90 W Load Mismatch all phases @ POUT W 10:1 VSWR all phases and POUT from 90 W POUT = 90 WPEP -76 -25 dBc Test Conditions Min. Typ. Max. 960 Unit MHz % dB dBcTYPICAL PERFORMANCE Output Power vs. Input Power
|Some Part number from the same manufacture ST Microelectronics, Inc.|
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