Details, datasheet, quote on part number: K10N06FM
PartK10N06FM
CategoryUnsorted => VIPower (Vertical Intelligent Power)
TitleVIPower (Vertical Intelligent Power)
Description"OMNIFET" Fully Autoprotected Power MOSFET
CompanyST Microelectronics, Inc.
DatasheetDownload K10N06FM datasheet
  

 

Features, Applications

LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN LOGIC LEVEL INPUT THRESHOLD ESD PROTECTION SCHMITT TRIGGER ON INPUT HIGH NOISE IMMUNITY

DESCRIPTION The VND10N06-1, VNP10N06FI and VNK10N06FM are monolithic devices made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

Symbol Parameter DPAK IPAK IR V esd Ptot Tc T stg Drain-source Voltage = 0) Input Voltage Input Current Drain Current Reverse DC Output Current Electrostatic Discharge (C= 100 pF, K ) Total Dissipation o C Operating Junction Temperature Case Operating Temperature Storage Temperature 35 Value ISOWATT220 Internally Clamped Internally Clamped 20 Internally Limited 4000 27 Internally Limited Internally Limited V mA

DPAK/IPAK R thj-case Thermal Resistance Junction-case Max R thj-amb Thermal Resistance Junction-ambient Max 14 100

ELECTRICAL CHARACTERISTICS (Tcase 25 oC unless otherwise specified) OFF

Symbol V CLAMP V IL VIH V INCL I DSS II SS Parameter Drain-source Clamp Voltage Input Low Level Voltage Input High Level Voltage Input-Source Reverse Clamp Voltage Zero Input Voltage Drain Current = 0) Supply Current from Input Pin Test Conditions = 0 VDS 5 V Min. 50 Typ. 60 Max. 70 1.5 Unit A

Symbol R DS(on) Parameter Static Drain-source On Resistance 7 V Test Conditions 125 C

Symbol C oss Parameter Output Capacitance Test Conditions = 13 MHz = 0 Min. Typ. 350 Max. 500 Unit pF

Symbol t d(on) tr t d(off) tf t d(on) tr t d(off) tf (di/dt) on Qi Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Current Slope Total Input Charge Test Conditions V Id gen = 10 (see figure V Id gen = 1000 (see figure V ID gen 1 A Vin 7 V Min. Typ. Max. Unit s nC

Symbol ) I RRM ( ) Parameter Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 1 A Test Conditions 1 A di/dt o C (see test circuit, figure 5) Min. Typ. Max. 1.6 Unit C A

Symbol I lim t dlim ) T jsh ) T jrs ( ) Parameter Drain Current Limit Step Response Current Limit Overtemperature Shutdown Overtemperature Reset Single Pulse Avalanche Energy starting V in gen 10 mH

Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Parameters guaranteed by design/characterization

 

Related products with the same datasheet
VND10N06
VND10N06-1
VNK10N06FM
VNP10N06FI
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