Details, datasheet, quote on part number: M68AF511AM70NC6
PartM68AF511AM70NC6
Category
Description4 Mbit (512K X8) 5.0V Asynchronous SRAM
CompanyST Microelectronics, Inc.
DatasheetDownload M68AF511AM70NC6 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 55ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O LOW ACTIVE and STANDBY POWER

TABLE OF CONTENTS SUMMARY DESCRIPTION. 3 Figure 2. Logic Diagram. Table 1. Signal Names. Figure 3. TSOP and SO Connections. Figure 4. Block Diagram.....................................................................................................................................................................

MAXIMUM RATING. 5 Table 2. Absolute Maximum Ratings. 5 DC AND AC PARAMETERS. 6 Table 3. Operating and AC Measurement Conditions. 6 Figure 5. AC Measurement I/O Waveform. 6 Figure 6. AC Measurement Load Circuit. 6 Table 4. Capacitance. 7 Table 5. DC Characteristics. 7 OPERATION. 8 Table 6. Operating Modes. 8 Read Mode. 8 Figure 7. Address Controlled, Read Mode AC Waveforms. 8 Figure 8. Chip Enable or Output Enable Controlled, Read Mode AC Waveforms. 9 Table 7. Read and Standby Mode AC Characteristics. 10 Write Mode. 11 Figure 10. Write Enable Controlled, Write AC Waveforms. 11 Figure 11. Chip Enable Controlled, Write AC Waveforms. 12 Table 8. Write Mode AC Characteristics. 12 Table 9. Low V CC Data Retention Characteristics. 13 PACKAGE MECHANICAL. 14 TSOP 32 Type - 32 lead Plastic Thin Small Outline Type II, Package Outline. 14 TSOP 32 Type - 32 lead Plastic Thin Small Outline Type II, Package Mechanical Data. - 32 lead Plastic Small Outline, Package Outline. - 32 lead Plastic Small Outline, Package Mechanical Data. 15 PART NUMBERING. 16 Table 12. Ordering Information Scheme. 1 6 REVISION HISTORY. 17 Table 13. Document Revision History. 17

SUMMARY DESCRIPTION The a 4 Mbit (4,194,304 bit) CMOS SRAM, organized as 524,288 words by 8 bits. The device features fully static operation requiring no external clocks or timing strobes, with equal address access and cycle times. It requires a single to 5.5V supply.

This device has an automatic power-down feature, reducing the power consumption by over 99% when deselected. The M68AF511A is available a 32 lead TSOP Type II and 32 lead SO packages.

A0-A18 DQ0-DQ7 Address Inputs Data Input/Output Chip Enable Output Enable Write Enable Supply Voltage Ground


 

Related products with the same datasheet
M68AF511AM70MC6T
M68AF511AM70MC6U
M68AF511AM70NC6T
Some Part number from the same manufacture ST Microelectronics, Inc.
M68AF511AM70NC6T 4 Mbit (512K X8) 5.0V Asynchronous SRAM
M68AR016DN70ZB1T 16 Mbit 1m X16 1.8v Asynchronous SRAM
M68AR024D 16 Mbit (1M X16) 1.8V Asynchronous SRAM
M68AR024DZB 16 Mbit 1m X16 1.8v Asynchronous SRAM
M68AR128M 2 Mbit (128K X16) 1.8V Asynchronous SRAM
M68AR128ML 128Kbit X 16, 70ns, One ce
M68AR128ML70ZB6 2 Mbit (128K X16) 1.8V Asynchronous SRAM
M68AR256M 4 Mbit (256K X16) 1.8V Asynchronous SRAM
M68AR256ML 256Kbit X 16, 70ns, One ce
M68AR256ML70ZB6 4 Mbit (256K X16) 1.8V Asynchronous SRAM
M68AR512D 8 Mbit (512K X16) 1.8V Asynchronous SRAM
M68AR512DL 512Kbit X 16, 70ns, Two ce
M68AR512DN70ZB1T 8 Mbit 512k X16 1.8v Asynchronous SRAM
M68AW031A 256 Kbit (32K X8) 3.0V Asynchronous SRAM
M68AW031AL 256Kbit X 8, 70ns
M68AW031AM55MS6T 256 Kbit (32K X8) 3.0V Asynchronous SRAM
M68AW064F 1 Mbit (64K X16) 3.0V Asynchronous SRAM
M68AW064FL 64Kbit X 16, 70ns, One ce
M68AW064FL55ZB6T 1 Mbit 64k X16 3.0v Asynchronous SRAM
M68AW127B 1 Mbit (128K X8), 3.0V Asynchronous SRAM
M68AW127BL10MC1T 1mbit 128k X8, 3.0v Asynchronous SRAM

PSD935G2-B-20B81 : Configurable Memory System on a Chip For 8-bit Microcontrollers

BUX77HR : Hi-Rel Bipolar Transistors Hi-Rel PNP bipolar transistor 150 V - 0.5 Ae

PSD813F2-90JI : Flash In-system Programmable ISP Peripherals For 8-bit MCUs

PSD953F5-20UIT : Flash In-system Programmable ISP Peripherals For 8-bit MCUs

NAND512W3A0BZA1F : 256/512mb/1gb (x8/x16, 1.8/3v, 528 Byte Page) NAND Flash Memories + 256/512mb (x16/x32, 1.8v) Lpsdram, MCP

NAND256R3A2BZA6 : 256/512mb/1gb (x8/x16, 1.8/3v, 528 Byte Page) NAND Flash Memories + 256/512mb (x16/x32, 1.8v) Lpsdram, MCP

NAND256W4A2AZA1F : 256/512mb/1gb (x8/x16, 1.8/3v, 528 Byte Page) NAND Flash Memories + 256/512mb (x16/x32, 1.8v) Lpsdram, MCP

M24256-DRMB6TG : 32K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8 Specifications: Density: 262 kbits ; Number of Words: 32 k ; Bits per Word: 8 bits ; Bus Type: Serial ; Production Status: Full Production ; Data Rate: 0 MHz ; Supply Voltage: 5V ; Package Type: LEAD FREE, PLASTIC, DIP-8, DIP ; Pins: 8 ; Operating Range: Industrial ; Operating Temperature: -40 to 85

STM32F103VBH6TR : 32-BIT, FLASH, 72 MHz, RISC MICROCONTROLLER, QCC48 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 16 MHz ; ROM Type: Flash ; Supply Voltage: 2 to 3.6 volts ; I/O Ports: 37 ; Package Type: Other, 7 X 7 MM, 0.5 MM PITCH, ROHS COMPLIANT, VFQFPN-48 ; Operating Range: Industrial ; Pin Count: 48 ; Operating Temperature: -40 to 85 C (-40 to 185 F)

 
0-C     D-L     M-R     S-Z