Details, datasheet, quote on part number: M68AR016DN70ZH6T
PartM68AR016DN70ZH6T
CategoryMemory => SRAM
Description16 Mbit 1m X16 1.8v Asynchronous SRAM
CompanyST Microelectronics, Inc.
DatasheetDownload M68AR016DN70ZH6T datasheet
  

 

Features, Applications

I/O SUPPLY VOLTAGE: 1.95V 1M WORDS x 16 bits LOW POWER SRAM EQUAL CYCLE and ACCESS TIME: 70ns LOW VCC DATA RETENTION: 1.0V LOW STANDBY CURRENT TRI-STATE COMMON I/O SINGLE BYTE READ/WRITE AUTOMATIC POWER DOWN

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

TABLE OF CONTENTS SUMMARY DESCRIPTION. 3 Figure 2. Logic Diagram. 3 Table 1. Signal Names. 3 Figure 3. TFBGA Connections (Top view through package). 4 Figure 4. Block Diagram. 5 MAXIMUM RATING. 5 Table 2. Absolute Maximum Ratings. 5 DC AND AC PARAMETERS. 6 Table 3. Operating and AC Measurement Conditions. 6 Figure 5. AC Measurement I/O Waveform. 6 Figure 6. AC Measurement Load Circuit. 6 Table 4. Capacitance. 7 Table 5. DC Characteristics. 7 OPERATION. 8 Table 6. Operating Modes. 8 Read Mode. 8 Figure 7. Address Controlled, Read Mode AC Waveforms. 8 Figure 8. Chip Enable or Output Enable Controlled, Read Mode AC Waveforms. 9 Figure 9. Chip Enable or UB/LB Controlled, Standby Mode AC Waveforms. 9 Table 7. Read and Standby Mode AC Characteristics. 10 Write Mode. 11 Figure 10. Write Enable Controlled, Write AC Waveforms. 11 Figure 11. Chip Enable E1 Controlled, Write AC Waveforms. 12 Figure 12. UB/LB Controlled, Write AC Waveforms. 12 Table 8. Write Mode AC Characteristics. 13 Figure 13. E1 Controlled, Low VCC Data Retention AC Waveforms. 14 Figure 14. E2 Controlled, Low VCC Data Retention AC Waveforms. 14 Table 9. Low VCC Data Retention Characteristics. 14 PACKAGE MECHANICAL. 15 Figure - 6x8 ball array, 0.75 mm pitch, Bottom View Package Outline. 15 Table - 6x8 ball array, 0.75 mm pitch, Package Mechanical Data. 16 PART NUMBERING. 17 Table 12. Ordering Information Scheme. 1 7 REVISION HISTORY. 18 Table 13. Document Revision History. 18

SUMMARY DESCRIPTION The a 16 Mbit (16,777,216 bit) Low Power SRAM fabricated in STMicroelectronics advanced CMOS technology, organized as 1,048,576 words by 16 bits. The device exhibits fully static operation requiring no external clocks or timing strobes. It needs to 1.95V supply voltage. By using the VCCQ pin all the outputs can be powered independently from the core supply voltage allowing to drive the I/O pins down 1.5V. V CCQ pin can be tied to Vcc if the feature is not required.

This device has a standard Asynchronous SRAM Interface. Read and Write cycles can be performed on a single byte by using UB/LB signals. The device can be put into standby mode by using E1/E2 pins. The same pins can be used to cascade more devices in order to achieve deep memory expansion. Standby mode allows a low current consumption, 99%, by reducing internal activities. The M68AR024D is available (0.75 mm pitch) package with industrial standard footprint.

A0-A19 DQ0-DQ15 Address Inputs Data Input/Output Chip Enables Output Enable Write Enable Upper Byte Enable Input Lower Byte Enable Input Supply Voltage I/O Supply Voltage Ground Not Connected Internally Don't Use as Internally Connected


 

Related products with the same datasheet
M68AR016DN70ZB6T
M68AR016DN70ZH1T
Some Part number from the same manufacture ST Microelectronics, Inc.
M68AR024D 16 Mbit (1M X16) 1.8V Asynchronous SRAM
M68AR024DZB 16 Mbit 1m X16 1.8v Asynchronous SRAM
M68AR128M 2 Mbit (128K X16) 1.8V Asynchronous SRAM
M68AR128ML 128Kbit X 16, 70ns, One ce
M68AR128ML70ZB6 2 Mbit (128K X16) 1.8V Asynchronous SRAM
M68AR256M 4 Mbit (256K X16) 1.8V Asynchronous SRAM
M68AR256ML 256Kbit X 16, 70ns, One ce
M68AR256ML70ZB6 4 Mbit (256K X16) 1.8V Asynchronous SRAM
M68AR512D 8 Mbit (512K X16) 1.8V Asynchronous SRAM
M68AR512DL 512Kbit X 16, 70ns, Two ce
M68AR512DN70ZB1T 8 Mbit 512k X16 1.8v Asynchronous SRAM
M68AW031A 256 Kbit (32K X8) 3.0V Asynchronous SRAM
M68AW031AL 256Kbit X 8, 70ns
M68AW031AM55MS6T 256 Kbit (32K X8) 3.0V Asynchronous SRAM
M68AW064F 1 Mbit (64K X16) 3.0V Asynchronous SRAM
M68AW064FL 64Kbit X 16, 70ns, One ce
M68AW064FL55ZB6T 1 Mbit 64k X16 3.0v Asynchronous SRAM
M68AW127B 1 Mbit (128K X8), 3.0V Asynchronous SRAM
M68AW127BL10MC1T 1mbit 128k X8, 3.0v Asynchronous SRAM
M68AW127BM70MC6U 1 Mbit (128K X8), 3.0V Asynchronous SRAM
M68AW127BM70N1T 1mbit 128k X8, 3.0v Asynchronous SRAM

M48Z35AVMH : 256 Kbit 32kb x8 Zeropower SRAM

PSD833F5-90UI : Flash In-system Programmable ISP Peripherals For 8-bit MCUs

NAND512R4A2CZB1E : 256/512mb/1gb (x8/x16, 1.8/3v, 528 Byte Page) NAND Flash Memories + 256/512mb (x16/x32, 1.8v) Lpsdram, MCP

STM6321RJWY6F : 5-pin Supervisor with Watchdog Timer and Push-button Reset

M27C322-80B1 : 32 Mbit (2Mb x16) UV Eprom and OTP Eprom

DEVKIT-M24LR-A : RF Development Tools M24LR-A DEV KIT Evaluation Board The STMicroelectronics M24LR64-R Dual Access Protocol RF EEPROM family of memories provides the flexibility to remotely program or update electronic products anytime during their lifetime and anywhere in the supply chain. The EEPROM memory bank of the STMicroelectronics M24LR64-R can be accessed eit

ST72325K4T6 : 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PDIP32 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 16 MHz ; ROM Type: MROM ; Supply Voltage: 3.8 to 5.5 volts ; I/O Ports: 24 ; Package Type: SDIP, Other, 0.400 INCH, PLASTIC, SDIP-32 ; Operating Range: Commercial ; Pin Count: 32 ; Operating Temperature: 0 to 70 C (32 to 158 F) ; Features: PWM

STM32F407IEH7XXX : RISC MICROCONTROLLER Specifications: Life Cycle Stage: ACTIVE

 
0-C     D-L     M-R     S-Z