Details, datasheet, quote on part number: TS420-x00B-TR
CategoryDiscrete => Thyristors => SCR (Silicon Controlled Rectifiers) => 4A - 6A - 8A - 12A - 16A
Title4A - 6A - 8A - 12A - 16A
Description4A SCRS
CompanyST Microelectronics, Inc.
DatasheetDownload TS420-x00B-TR datasheet


Features, Applications

DESCRIPTION Thanks to highly sensitive triggering levels, the TS420 series is suitable for all applications where the available gate current is limited, such as motor control for hand tools, kitchen aids, overvoltage crowbar protection for low power supplies,... Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space area.

Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180 conduction angle) Average on-state current (180 conduction angle) Non repetitive surge peak on-state current It Value for fusing Critical rate of rise of on-state current 2 x IGT 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range A2 S A/s = 115C Value 33 A Unit A

Symbol IGT VGT VGD VRG IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IRG 1 mA ITM 8 A RGK 1 k RGK 1 k RGK 3.3 k RGK = 33 Test Conditions MAX. MIN. MAX. MIN. MAX. TS420 Unit V mA V/s A mA

Threshold voltage Dynamic resistance VDRM = VRRM RGK = 220

Symbol Rth(j-c) Rth(j-a) Junction to case (DC) Junction to ambient (DC) = 0.5 cm DPAK IPAK TO-220AB

Voltage (xxx) Part Number 200 A DPAK IPAK TO-220AB Sensitivity Package
PACKING MODE Blank: Tube -TR: DPAK tape & reel
Packing mode Tube Tape & reel Tube
Fig. 1: Maximum average power dissipation versus average on-state current.
Fig. 2-1: Average and D.C. on-state current versus case temperature.

Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) (DPAK).

Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, FR4 PC board) for DPAK.


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