|Category||Semiconductors => Discrete Semiconductors => Thyristors => Triacs|
|Title||Triacs Standard 1A Triacs 5mA 600V SMBF3L|
|Company||ST Microelectronics, Inc.|
|Datasheet||Download Z0107MUF datasheet
|Off-State Leakage Current @ VDRM IDRM||0.005 mA|
|Gate Trigger Voltage (Vgt)||1.3 V|
|Gate Trigger Current (Igt)||7 mA|
|Holding Current (Ih Max)||10 mA|
|Package / Case||SMBflat-3L|
|Breakover Voltage VBO||600 V|
|Maximum Operating Temperature||+ 125 C|
|Minimum Operating Temperature||- 40 C|
On-state rms current, IT(RMS) 1 A Repetitive peak off-state voltage, VDRM/VRRM 800 V Triggering gate current, IGT 25 mADescription
The Z01 series is suitable for general purpose AC switching applications. These devices are typically used in applications such as home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,... Different gate current sensitivities are available, allowing optimized performance when driven directly through microcontrollers.Symbol On-state rms current (full sine wave)
Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I²t Value for fusing
Critical rate of rise of on-state current 2 x IGT 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range 20 µs1. Minimum IGT is guaranteed 5% of IGT max. 2. For both polarities of A2 referenced to A1.
Test conditions ITM 380 µs Threshold voltage Dynamic resistance VDRM = VRRM 125 °C MAX. 0.5 mA Value Unit m µAParameter Junction to tab (AC) Junction to tab (AC) Junction to lead (AC) 5 cm
Maximum power dissipation versus on-state rms current (full cycle)
On-state rms current versus lead (TO-92) or tab (SOT-223, SMBflat3L) temperature (full cycle)
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