Details, datasheet, quote on part number: K1200G
PartK1200G
CategoryDiscrete
DescriptionTeccor® Sidac ;; Package= TO-92 Two-lead
CompanyTeccor Electronics
DatasheetDownload K1200G datasheet
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Features, Applications

The sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the sidac breakover voltage point, the sidac switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or drops below the minimum holding current of the device. Teccor's sidacs feature glass-passivated junctions to ensure a rugged and dependable device capable of withstanding harsh environments. Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for more information.

Applications

High-voltage lamp ignitors Natural gas ignitors Gas oil ignitors High-voltage power supplies Xenon ignitors Overvoltage protector Pulse generators Fluorescent lighting ignitors HID lighting ignitors

Features
AC circuit oriented Glass-passivated junctions High surge current capability

di/dt Critical rate-of-rise of on-state current dv/dt Critical rate-of-rise of off-state voltage at rated VDRM; 100 C IBO Breakover current 50/60 Hz sine wave IDRM Repetitive peak off-state current 50/60 Hz sine wave; V = VDRM IH Dynamic holding current 50/60 Hz sine wave; = 100 IT(RMS) On-state RMS current 50/60 Hz sine wave ITSM Peak one-cycle surge current 50/60 Hz sine wave (nonrepetitive) RS Switching resistance R

See 4 for VBO change versus junction temperature. See 4 for IBO versus junction temperature. See 3 for IH versus case temperature. See 5 for test circuit. See 3 for more than one full cycle rating. 90 C for TO-92 Sidac 105 C for TO-202 Sidacs 100 C for 90 C for DO-214 See 5 for clarification of sidac operation. For best sidac operation, the load impedance should be near or less than switching resistance. See package outlines for lead form configurations. When ordering special lead forming, add type number as suffix to part number.

VBO Breakover voltage 50/60 Hz sine wave VDRM Repetitive peak off-state voltage VTM Peak on-state voltage; 1 A

All measurements are made 60 Hz with a resistive load at an ambient temperature +25 C unless otherwise specified. Storage temperature range (TS) to +150 C. The case (TC) or lead (TL) temperature is measured as shown on the dimensional outline drawings in the "Package Dimensions" section of this catalog. Junction temperature range (TJ) to +125 C. Lead solder temperature is a maximum +230 C for 10 s maximum; 1/16" (1.59 mm) from case.

Thermal Resistance (Steady State) RJC [RJA] C/W (TYPICAL) *

* See Electrical Specification Note (6). RJA for TO-202 Type 23 and Type is 70 C/Watt. Mounted 1 cm2 copper foil surface; two-ounce copper foil

Peak Surge (Non-repetitive) On-state Current [ITSM] Amps

SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT: IT RMS Maximum Rated Value at Specified Junction Temperature

Figure E9.2 Normalized DC Holding Current versus Case/Lead Temperature

Notes: 1) Blocking capability may be lost during and immediately following surge current interval. 2) Overload may not be repeated until junction temperature has returned to steady-state rated value.

Figure E9.1 Peak Surge Current versus Surge Current Duration

 

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