Details, datasheet, quote on part number: TLC25M2BCD
PartTLC25M2BCD
CategorySemiconductors => Amplifiers => Operational Amplifiers (Op Amps) => General-Purpose Op Amps
Part familyTLC25M2B LinCMOS(TM) Dual Operational Amplifier
DescriptionLinCMOS(TM) Dual Operational Amplifier 8-SOIC
CompanyTexas Instruments, Inc.
StatusOBSOLETE
ROHSNot Compliant
SampleNo
DatasheetDownload TLC25M2BCD datasheet
Cross ref.Similar parts: TLC25M2, TLC25M2A
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  Mecanical Data
Pin nbPackage typeInd stdJEDEC codePackage qtyCarrierDevice markWidth (mm)Length (mm)Thick (mm)Pitch (mm)
8DSOICR-PDSO-G 3.914.91.581.27
Spice Model
TLC25M2, TLC25M2A, TLC25M2B PSpice Model - ZIP (01/10/2002)

 

Features, Applications

A-Suffix Versions Offer 5-mV VIO B-Suffix Versions Offer 2-mV VIO Wide Range of Supply Voltages 16 V True Single-Supply Operation Common-Mode Input Voltage Includes the Negative Rail Low Noise. 30 nV/Hz Typ = 1 kHz (High-Bias Versions)

description

The TLC252, TLC25L2, and TLC25M2 are OUT IN low-cost, low-power dual operational amplifiers designed to operate with single or dual supplies. These devices utilize the Texas Instruments silicon gate LinCMOS process, giving them stable input offset voltages that are available in selected grades 10 mV maximum, very high input impedances, and extremely low input offset and bias currents. Because the input common-mode range extends to the negative rail and the power consumption is extremely low, this series is ideally suited for battery-powered or energy-conserving applications. The series offers operation down a 1.4-V supply, is stable at unity gain, and has excellent noise characteristics. These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures at voltages V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised in handling these devices as exposure to ESD may result in a degradation of the device parametric performance.

AVAILABLE OPTIONS TA VIOmax 2 mV PACKAGED DEVICES SMALL OUTLINE (D) TLC25M2ACD TLC25M2BCD PLASTIC DIP (P) TLC25M2ACP TLC25M2BCP TSSOP (PW) TLC25L2ACPW TLC25L2BCPW CHIP FORM (Y) TLC25L2Y TLC25M2Y

The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC252CDR). Chips are tested at 25C.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. LinCMOS is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Because of the extremely high input impedance and low input bias and offset currents, applications for the TLC252/ 25_2 series include many areas that have previously been limited to BIFET and NFET product types. Any circuit using high-impedance elements and requiring small offset errors is a good candidate for cost-effective use of these devices. Many features associated with bipolar technology are available with LinCMOS operational amplifiers without the power penalties of traditional bipolar devices. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the / 25_2 series devices. Remote and inaccessible equipment applications are possible using their low-voltage and low-power capabilities. The / 25_2 series is well suited to solve the difficult problems associated with single-battery and solar-cell-powered applications. This series includes devices that are characterized for the commercial temperature range and are available in 8-pin plastic dip and the small-outline package. The device is also available in chip form. The / 25_2 series is characterized for operation from to 70C.

These chips, properly assembled, display characteristics similar to the / 25_2. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform.

CHIP THICKNESS: 15 TYPICAL BONDING PADS: 4 MINIMUM TJMAX = 150C TOLERANCES ARE 10%. ALL DIMENSIONS ARE IN MILS. PIN (4) IS INTERNALLY CONNECTED TO BACKSIDE OF CHIP.


 

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