|Category||Semiconductors => Amplifiers => Operational Amplifiers (Op Amps) => General-Purpose Op Amps|
|Part family||TLC25M4B LinCMOS(TM) Quad Operational Amplifier|
|Description||LinCMOS(TM) Quad Operational Amplifier 14-SOIC|
|Company||Texas Instruments, Inc.|
|Datasheet||Download TLC25M4B datasheet
|Pin nb||Package type||Ind std||JEDEC code||Package qty||Carrier||Device mark||Width (mm)||Length (mm)||Thick (mm)||Pitch (mm)|
|TLC25M4, TLC25M4A, TLC25M4B PSpice Model - ZIP (01/10/2002)|
A-Suffix Versions Offer 5-mV VIO B-Suffix Versions Offer 2-mV VIO Wide Range of Supply Voltages 16 V True Single-Supply Operation Common-Mode Input Voltage Includes the Negative Rail Low Noise. 25 nV/Hz Typ = 1 kHz (High-Bias Version)
description symbol (each amplifier) The IN + and TL25M4B are low-cost, low-power quad OUT operational amplifiers designed to operate with IN single or dual supplies. These devices utilize the Texas Instruments silicon gate LinCMOS process, giving them stable input-offset voltages that are available in selected grades 10 mV maximum, very high input impedances, and extremely low input offset and bias currents. Because the input common-mode range extends to the negative rail and the power consumption is extremely low, this series is ideally suited for battery-powered or energy-conserving applications. The series offers operation down a 1.4-V supply, is stable at unity gain, and has excellent noise characteristics.
These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures at voltages V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised in handling these devices as exposure to ESD may result in degradation of the device parametric performance. Because of the extremely high input impedance and low input bias and offset currents, applications for these devices include many areas that have previously been limited to BIFET and NFET product types. Any circuit using high-impedance elements and requiring small offset errors is a good candidate for cost-effective use of these devices. Many features associated with bipolar technology are available with LinCMOS operational amplifiers without the power penalties of traditional bipolar devices.
Available options TA VIOmax 2 mV PACKAGED DEVICES SMALL OUTLINE (D) TLC25M4ACD TLC25M4BCD PLASTIC DIP (N) TLC25M4ACN TLC25M4BCN TSSOP (PW) TLC25L4CPW TLC25M4CPW CHIP FORM (Y) TLC25L4Y TLC25M4Y
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC254CDR). Chips are tested at 25°C.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are all easily designed with these devices. Remote and inaccessible equipment applications are possible using their low-voltage and low-power capabilities. These devices are well suited to solve the difficult problems associated with single-battery and solar-cell-powered applications. This series includes devices that are characterized for the commercial temperature range and are available in 14-pin plastic dip and the small-outline packages. The device is also available in chip form. These devices are characterized for operation from to 70°C.
DEVICE FEATURES PARAMETER Supply current (Typ) Slew rate (Typ) Input offset voltage (Max) TLC25L4BC, TLC25M4BC Offset voltage drift (Typ) Offset voltage temperature coefficient (Typ) Input bias current (Typ) TLC25L4_C (LOW BIAS) µA 0.04 V/µA mV 0.1 µV/month 0.7 µV/°C pA TLC25M4_C (MEDIUM BIAS) µA 0.6 V/µA mV 0.1 µV/month 2 µV/°C pA TLC254_C (HIGH BIAS) µA 4.5 V/µA mV 0.1 µV/month 5 µV/°C 1 pAInput offset current (Typ) 1 pA The long-term drift value applies after the first month.
These chips, when properly assembled, display characteristics similar to the TLC25_4C. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform.
CHIP THICKNESS: 15 TYPICAL BONDING PADS: × 4 MINIMUM TJmax = 150°C TOLERANCES ARE ± 10%. ALL DIMENSIONS ARE IN MILS. PIN (11) IS INTERNALLY CONNECTED TO BACKSIDE OF CHIP.
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