Details, datasheet, quote on part number: TMS28F020-10C5FML
CategoryMemory => Flash
Descriptionti TMS28F020, 262 144 BY 8-Bit Flash Memory
CompanyTexas Instruments, Inc.
DatasheetDownload TMS28F020-10C5FML datasheet
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Features, Applications

Organization. by 8-Bits Pin Compatible With Existing 2-Megabit EPROMs VCC Tolerance 10% All Inputs/Outputs TTL Compatible Maximum Access/Minimum Cycle Time 170 ns Industry-Standard Programming Algorithm 100 000 and 10 000 Program / Erase-Cycle Versions Available Latchup Immunity mA on All Input and Output Lines Low Power Dissipation (VCC V) Active Write. mW Active Read. mW Electrical Erase. mW Standby. 0.55 mW (CMOS-Input Levels) Automotive Temperature Range to 125C

PIN NOMENCLATURE E G VCC VPP VSS W Address Inputs (programming) / Outputs Chip Enable Output Enable 5-V Power Supply 12-V Power Supply Ground Write Enable


The TMS28F020 flash memory 097 152-bit), programmable read-only memory that can be electrically bulk-erased and reprogrammed. It is available 100 000 and 10 000 program/erase-endurance-cycle versions. The TMS28F020 is offered a 32-lead plastic leaded chip-carrier package using 1,25-mm (50-mil) lead spacing (FM suffix) and a 32-lead thin small-outline package (DD suffix).

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Temperature Range Designator to 125C Package Designator FM = Plastic Leaded Chip-Carrier DD = Thin Small-Outline Package Program/Erase Endurance 100 000 Cycles 10 000 Cycles Speed Designator 170 ns

This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12. Pin numbers shown are for the FM package.


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