Details, datasheet, quote on part number: TMS28F210-17C3
PartTMS28F210-17C3
CategoryMemory => Flash
Descriptionti TMS28F210, 65 536 BY 16-Bit Flash Memory
CompanyTexas Instruments, Inc.
DatasheetDownload TMS28F210-17C3 datasheet
  

 

Features, Applications

Organization. by 16-Bits Pin Compatible With Existing 1-Megabit EPROMs All Inputs/Outputs TTL Compatible VCC Tolerance ±10% Maximum Access/Minimum Cycle Time 170 ns Industry-Standard Programming Algorithm PEP4 Version Available With 168-Hour Burn-In and Choice of Operating Temperature Ranges 10 000 and 1 000 Program/Erase Cycles Latchup Immunity mA on All Input and Output Lines Low Power Dissipation ( VCC ) ­ Active Write. mW ­ Active Read. mW ­ Electrical Erase. mW ­ Standby. 0.55 mW (CMOS-Input Levels) Automotive Temperature Range to 125°C

description

The (1048 576-bit), programmable read-only memory that can be electrically bulk-erased and reprogrammed. It is available 10 000- and 1 000-program/erase-endurance-cycle versions. The TMS28F210 flash memory is offered a 44-lead plastic leaded chip carrier package using mm (50-mil) lead spacing (FN suffix), and a 40-lead thin small-outline package (DBW suffix). The TMS28F210 is characterized for operation in temperature ranges to 85°C, and to 125°C.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

PIN NOMENCLATURE E G VSS ­ DQ15 VCC VPP Only in program mode Address Inputs Chip Enable Output Enable Ground No Connection Program Inputs (programming)/Outputs 5-V Supply 12-V Power Supply

FN L Temperature Range Designator to 125°C Package Designator DBW = Thin Small-Outline Package FN = Plastic Leaded Chip Carrier Package Program/Erase Endurance 10 000 Cycles 1 000 Cycles


 

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