Details, datasheet, quote on part number: TMS28F400AET
CategorySemiconductors => Memory => Flash
Part familyTMS28F400AET 262 144 By 16-Bit, 524 288 By 8-Bit Auto-Select Boot--Bit Auto-Select Boot-Block Flash Memory
Descriptionti TMS28F400AET, 262 144 BY 16-Bit, 524 288 BY 8-Bit Auto-select Boot--bit Auto-select Boot-block Flash Memory
CompanyTexas Instruments, Inc.
ROHSNot Compliant
DatasheetDownload TMS28F400AET datasheet
  Mecanical Data
Pin nbPackage typeInd stdJEDEC codePackage qtyCarrierDevice markWidth (mm)Length (mm)Thick (mm)Pitch (mm)


Features, Applications

By 8 Bits By 16 Bits Array-Blocking Architecture ­ One 16K-Byte Protected Boot Block ­ Two 8K-Byte Parameter Blocks ­ One 96K-Byte Main Block ­ Three 128K-Byte Main Blocks ­ Top or Bottom Boot Locations '28F400Axy Offers a User-Defined 8-Bit (Byte) or 16-Bit (Word) Organization '28F004Axy Offers Only the 8-Bit Organization Maximum Access / Minimum Cycle Time ­ Commercial and Extended 5-V VCC 10% 3.3-V VCC ns ­ Automotive (offered for only 5-V VCC voltage configurations) 5-V VCC or Z Depending on VCC / VPP Configuration) or B for Top or Bottom Boot-Block Configuration) 100 000 and 10 000 Program / Erase Cycle Versions Three Temperature Ranges ­ Commercial. 70°C ­ Extended. 85°C ­ Automotive. to 125°C Industry Standard Packages Offered ­ 40-Pin TSOP (DCD Suffix) ­ 44-Pin PSOP (DBJ Suffix) ­ 48-Pin TSOP (DCD Suffix) Low Power Dissipation ( VCC ) ­ Active Write. mW ( Byte Write) ­ Active Read. mW ( Byte Read) ­ Active Write. mW ( Word Write) ­ Active Read. mW ( Word Read) ­ Block Erase. mW ­ Standby. 0.72 mW (CMOS-Input Levels)

PIN NOMENCLATURE ­ A17 BYTE NC RP VCC VPP VSS W DU/WP Address Inputs Byte Enable Data In / Out Data In / Out (word-wide mode), Low-Order Address (byte-wide mode) Chip Enable Output Enable No Internal Connection Reset / Deep Power-Down Power Supply Power Supply for Program / Erase Ground Write Enable Do Not Use for 'AMy or 'AZy /Write Protect

Fully Automated On-Chip Erase and Word / Byte Program Operations Write Protection for Boot Block Industry Standard Command-State Machine (CSM) ­ Erase Suspend/Resume ­ Algorithm-Selection Identifier Three Different Combinations of Supply Voltages Offered All Inputs / Outputs TTL Compatible

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Table of Contents description. 3 read operations. device symbol nomenclature. 5 programming operations. functional block diagram. 6 erase operations. architecture. 6 automatic power-saving mode. block memory maps. 6 reset / deep power-down mode. boot-block data protection. 8 power-supply detection. parameter block. 8 absolute maximum ratings. main block. 8 capacitance. data protection. 8 TMS28F004ASy and TMS28F400ASy. command-state machine (CSM). 8 TMS28F004AEy and TMS28F400AEy. operation. 9 TMS28F004AMy and TMS28F400AMy. command definitions. 9 TMS28F004AFy and TMS28F400AFy. status register. 10 TMS28F004AZy and TMS28F400AZy. byte-wide or word-wide mode selection. 11 Parameter Measurement Information. command-state machine (CSM) operations. 13 mechanical data ­ DBJ (R-PDSO-G44). clear status register. 13 mechanical data ­ DCD (R-PDSO-G**).


The by 8 bits by 16 bits 194 304-bit), boot-block flash memory that can be electrically block-erased and reprogrammed. The TMS28F400Axy is organized in a blocked architecture consisting of:

One 16K-byte protected boot block Two 8K-byte parameter blocks One 96K-byte main block Three 128K-byte main blocks

Table 1 lists the five different voltage configurations available for ordering. Operation 256K-word (16-bit) organization is user-definable. Table 1. VCC/VPP Voltage Configurations, Temperature, and Speeds Matrix

DEVICE CONFIGURATION DEVICE TMS28F400AEy TMS28F400AMy READ (VCC) 5 V±10% PROGRAM/ERASE (VPP) 12 V±10% TEMPERATURE (TA) to 125°C Only the 44-pin PSOP is offered in the to 125°C temperature range. NOTE 1: All configurations are available in the TMS28F004Axy (8 bit configuration only) and top or bottom boot. ACCESS SPEEDS ­ 5-V(3.3-V) VCC 90 ns


Some Part number from the same manufacture Texas Instruments, Inc.
TMS28F400AFB ti TMS28F400AFB, 262 144 BY 16-Bit, 524 288 BY 8-Bit Auto-select Boot-block Flash Memory
TMS28F400AFT ti TMS28F400AFT, 262 144 BY 16-Bit, 524 288 BY 8-Bit Auto-select Boot-block Flash Memory
TMS28F400AMB ti TMS28F400AMB, 262 144 BY 16-Bit, 524 288 BY 8-Bit Auto-select Boot-block Flash Memory
TMS28F400AMT ti TMS28F400AMT, 262 144 BY 16-Bit, 524 288 BY 8-Bit Auto-select Boot-block Flash Memory
TMS28F400ASB ti TMS28F400ASB, 262 144 BY 16-Bit, 524 288 BY 8-Bit Auto-select Boot-block Flash Memory
TMS28F400AST ti TMS28F400AST, 262 144 BY 16-Bit, 524 288 BY 8-Bit Auto-select Boot-block Flash Memory
TMS28F400AXY 524 288 BY 8-bit/262 144 BY 16-bit Auto-select Boot-block Flash Memories
TMS28F400AZB ti TMS28F400AZB, 262 144 BY 16-Bit, 524 288 BY 8-Bit Auto-select Boot-block Flash Memory
TMS28F400AZT ti TMS28F400AZT, 262 144 BY 16-Bit, 524 288 BY 8-Bit Auto-select Boot-block Flash Memory
TMS28F400BZ 524 288 BY 8-bit/262 144 BY 16-bit Boot-block Flash Memory
TMS28F400BZB90BDBJL ti TMS28F400BZB, 262 144 BY 16-Bit, 524 288 BY 8-Bit Boot-block Flash Memory
TMS28F512A 65 536 BY 8-bit Flash Memory
TMS28F512A-10C4FML ti TMS28F512A, 65 536 BY 8-Bit Flash Memory
TMS28F512A-12C3 65 536 BY 8-bit Flash Memory
TMS28F512A-12C4FML ti TMS28F512A, 65 536 BY 8-Bit Flash Memory
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TMS28F512A-15C4FML ti TMS28F512A, 65 536 BY 8-Bit Flash Memory
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TMS28F800ALB10BDCDE ti TMS28F800ALB, 1 048 576 BY 8-Bit, 524 288 BY 16-Bit Autoselect Boot Block Flash Memory
TMS28F800ALT12BDCDE ti TMS28F800ALT, 1 048 576 BY 8-Bit, 524 288 BY 16-Bit Autoselect Boot Block Flash Memory
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