Details, datasheet, quote on part number: TMS28F400AZB
CategorySemiconductors => Memory => Flash
Part familyTMS28F400AZB 262 144 By 16-Bit, 524 288 By 8-Bit Auto-Select Boot-Block Flash Memory
Descriptionti TMS28F400AZB, 262 144 BY 16-Bit, 524 288 BY 8-Bit Auto-select Boot-block Flash Memory
CompanyTexas Instruments, Inc.
ROHSNot Compliant
DatasheetDownload TMS28F400AZB datasheet
Find where to buy
  Mecanical Data
Pin nbPackage typeInd stdJEDEC codePackage qtyCarrierDevice markWidth (mm)Length (mm)Thick (mm)Pitch (mm)


Features, Applications

By 8 Bits By 16 Bits Array-Blocking Architecture One 16K-Byte Protected Boot Block Two 8K-Byte Parameter Blocks One 96K-Byte Main Block Three 128K-Byte Main Blocks Top or Bottom Boot Locations '28F400Axy Offers a User-Defined 8-Bit (Byte) or 16-Bit (Word) Organization '28F004Axy Offers Only the 8-Bit Organization Maximum Access / Minimum Cycle Time Commercial and Extended 5-V VCC 10% 3.3-V VCC ns Automotive (offered for only 5-V VCC voltage configurations) 5-V VCC or Z Depending on VCC / VPP Configuration) or B for Top or Bottom Boot-Block Configuration) 100 000 and 10 000 Program / Erase Cycle Versions Three Temperature Ranges Commercial. 70C Extended. 85C Automotive. to 125C Industry Standard Packages Offered 40-Pin TSOP (DCD Suffix) 44-Pin PSOP (DBJ Suffix) 48-Pin TSOP (DCD Suffix) Low Power Dissipation ( VCC ) Active Write. mW ( Byte Write) Active Read. mW ( Byte Read) Active Write. mW ( Word Write) Active Read. mW ( Word Read) Block Erase. mW Standby. 0.72 mW (CMOS-Input Levels)

PIN NOMENCLATURE A17 BYTE NC RP VCC VPP VSS W DU/WP Address Inputs Byte Enable Data In / Out Data In / Out (word-wide mode), Low-Order Address (byte-wide mode) Chip Enable Output Enable No Internal Connection Reset / Deep Power-Down Power Supply Power Supply for Program / Erase Ground Write Enable Do Not Use for 'AMy or 'AZy /Write Protect

Fully Automated On-Chip Erase and Word / Byte Program Operations Write Protection for Boot Block Industry Standard Command-State Machine (CSM) Erase Suspend/Resume Algorithm-Selection Identifier Three Different Combinations of Supply Voltages Offered All Inputs / Outputs TTL Compatible

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Table of Contents description. 3 read operations. device symbol nomenclature. 5 programming operations. functional block diagram. 6 erase operations. architecture. 6 automatic power-saving mode. block memory maps. 6 reset / deep power-down mode. boot-block data protection. 8 power-supply detection. parameter block. 8 absolute maximum ratings. main block. 8 capacitance. data protection. 8 TMS28F004ASy and TMS28F400ASy. command-state machine (CSM). 8 TMS28F004AEy and TMS28F400AEy. operation. 9 TMS28F004AMy and TMS28F400AMy. command definitions. 9 TMS28F004AFy and TMS28F400AFy. status register. 10 TMS28F004AZy and TMS28F400AZy. byte-wide or word-wide mode selection. 11 Parameter Measurement Information. command-state machine (CSM) operations. 13 mechanical data DBJ (R-PDSO-G44). clear status register. 13 mechanical data DCD (R-PDSO-G**).


The by 8 bits by 16 bits 194 304-bit), boot-block flash memory that can be electrically block-erased and reprogrammed. The TMS28F400Axy is organized in a blocked architecture consisting of:

One 16K-byte protected boot block Two 8K-byte parameter blocks One 96K-byte main block Three 128K-byte main blocks

Table 1 lists the five different voltage configurations available for ordering. Operation 256K-word (16-bit) organization is user-definable. Table 1. VCC/VPP Voltage Configurations, Temperature, and Speeds Matrix

DEVICE CONFIGURATION DEVICE TMS28F400AEy TMS28F400AMy READ (VCC) 5 V10% PROGRAM/ERASE (VPP) 12 V10% TEMPERATURE (TA) to 125C Only the 44-pin PSOP is offered in the to 125C temperature range. NOTE 1: All configurations are available in the TMS28F004Axy (8 bit configuration only) and top or bottom boot. ACCESS SPEEDS 5-V(3.3-V) VCC 90 ns


Related products with the same datasheet
Some Part number from the same manufacture Texas Instruments, Inc.
TMS28F400AZB70BDBJL ti TMS28F400AZB, 262 144 BY 16-Bit, 524 288 BY 8-Bit Auto-select Boot-block Flash Memory
TMS28F400AZT ti TMS28F400AZT, 262 144 BY 16-Bit, 524 288 BY 8-Bit Auto-select Boot-block Flash Memory
TMS28F400BZ 524 288 BY 8-bit/262 144 BY 16-bit Boot-block Flash Memory
TMS28F400BZB90BDBJL ti TMS28F400BZB, 262 144 BY 16-Bit, 524 288 BY 8-Bit Boot-block Flash Memory
TMS28F512A 65 536 BY 8-bit Flash Memory
TMS28F512A-10C4FML ti TMS28F512A, 65 536 BY 8-Bit Flash Memory
TMS28F512A-12C3 65 536 BY 8-bit Flash Memory
TMS28F512A-12C4FML ti TMS28F512A, 65 536 BY 8-Bit Flash Memory
TMS28F512A-15C3 65 536 BY 8-bit Flash Memory
TMS28F512A-15C4FML ti TMS28F512A, 65 536 BY 8-Bit Flash Memory
TMS28F512A-17C3 65 536 BY 8-bit Flash Memory
TMS28F800ALB10BDCDE ti TMS28F800ALB, 1 048 576 BY 8-Bit, 524 288 BY 16-Bit Autoselect Boot Block Flash Memory
TMS28F800ALT12BDCDE ti TMS28F800ALT, 1 048 576 BY 8-Bit, 524 288 BY 16-Bit Autoselect Boot Block Flash Memory
TMS29F002 262 144 BY 8-bit Flash Memory
TMS29F002RB-10BFML ti TMS29F002RB, 262 144 BY 8-Bit Boot Block Flash Memory
TMS29F002RT-10BFML ti TMS29F002RT, 262 144 BY 8-Bit Boot Block Flash Memory
TMS29F010 131 072 BY 8-bit Flash Memory
TMS29F010-12C5FME ti TMS29F010, 1 048 576-Bit Flash Memory
TMS29F010-15 131 072 BY 8-bit Flash Memory
TMS29F010-70C5FME ti TMS29F010, 1 048 576-Bit Flash Memory
Same catergory

CY7C43644AV : 3.3V 1K/4K/16K X36 x2 Bidirectional Synchronous Fifo With Bus Matching.

HYM72V32656HLT8-P : ->Unbuffered DIMM. based on 32Mx8 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32656H(L)T8 Series The HYM72V32656H(L)T8 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 32Mx8bits CMOS Synchronous DRAMs 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package a 168pin glass-epoxy printed circuit board. One 0.22uF and one 0.0022uF.

IS62V6416BL : Low Voltage Ultra Low Power CMOS Static RAM: 64kx16. Access time: 100 and 120 ns CMOS low power operation TTL compatible interface levels Single 2.7V-3.3V power supply Fully static operation: no clock or refresh required Three state outputs Data control for upper and lower bytes Industrial temperature available Available in Jedec Std 44-pin SOJ package, 44-pin TSOP (Type II), and 48-pin mini BGA The ISSI.

LH28F008BJT-TTLZ2 : 8M Top Boot Block Flash. Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company. When using the products covered herein, please observe the conditions written herein and the precautions outlined in the following paragraphs.

M377S3320CT3 : Registered DIMM. = M377S3320CT3 32MBx72 Sdram Dimm With PLL & Register Based on 32MBx4, 4Banks, 4KB Ref., 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 256 ;; Organization = 32Mx72 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 1H,1L ;; #of Pin = 168 ;; Power = C ;; Component Composition = (32Mx4)x18+Drive ICx3+PLL+EEPROM ;; Production.

M53210224CB2 : SIMM. = M53210224CW2 2MB X 32 DRAM Simm Using 1MB X 16, 1KB Refresh, 5V ;; Density(MB) = 8 ;; Organization = 2Mx32 ;; Mode = Fast Page ;; Refresh = 1K/16ms ;; Speed(ns) = 50,60 ;; #of Pin = 42 ;; Component Composition = (1Mx16)x4 ;; Production Status = Eol ;; Comments = -.

M58LW128A150N1E : 128 Mbit 8mb X16 or 4mb X32, Uniform Block, Burst 3v Supply Flash Memories.

MB84VA2001-10 : 8m ( X 8 ) Flash Memory & 2m ( X 8 ) Static RAM. Power supply voltage 3.6 V High performance 100 ns maximum access time Operating Temperature to +85C FLASH MEMORY Minimum 100,000 write/erase cycles Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase. Boot Code Sector Architecture.

THMY7280D0CEG : Synchronous DRAM Module: 8mx72.

THNCF064MM : CompactFlash. Capacity = 64MByte ;; Package = Compactflash Type-i ;; Performance Write/read = 1.5MB/6.5MB Per Sec..

TM124BBK32S-60 : ti TM124BBK32S, 1 048 576 BY 32-Bit Dynamic RAM Module. Organization TM124BBK32. TM248CBK32. Single 5-V Power Supply (10 % Tolerance) 72-pin Single In-Line Memory Module (SIMM) for Use With Sockets TM124BBK32-Utilizes Eight 4-Megabit DRAMs in Plastic Small-Outline J-Lead (SOJ) Packages TM248CBK32-Utilizes Sixteen 4-Megabit DRAMs in Plastic Small-Outline J-Lead (SOJ) Packages Distributed Refresh Period ms (1024.

VS1664648041D : Config = 8Mx64 ;; Speed Grade = -7/-7L/-8H ;; Refresh = Syn. (4K) ;; Device &PACKAGE = 8Mx8 400mil Tsopii.

WSE128K16 : SRAM/EEPROM MCP. Organization = 128Kx16 ;; Speed (ns) = 35-150,70-300 ;; Volt = 5 ;; Package = 68 CQFP ;; Temp = C,i,m ;;.

X86C64 : E2 Micro-peripheral. CONCURRENT READ WRITETM --Dual Plane Architecture Isolates Read/Write Functions Between Planes Allows Continuous Execution of Code From One Plane While Writing in the Other Plane Multiplexed Address/Data Bus --Direct Interface to Popular 8-bit Microcontrollers, e.g. Zilog Z8 Family High Performance CMOS --Fast Access Time, 120 ns --Low Power 60 mA Maximum.

STK11C88 : Specialty NvSRAM The Simtek STK11C88 is a 256Kb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. The SRAM provides the fast access & cycle times, ease of use and unlimited read & write endurance of a normal SRAM. Data transfers under software control to the non-volatile storage cell (the STORE operation).

CAV25640VP2E-GT3 : 8K X 8 SPI BUS SERIAL EEPROM, PDSO8. s: Density: 66 kbits ; Number of Words: 8 k ; Bits per Word: 8 bits ; Bus Type: Serial ; Production Status: Full Production ; Data Rate: 10 MHz ; Logic Family: CMOS ; Supply Voltage: 5V ; Package Type: 2 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, MO-229, TDFN-8 ; Pins: 8 ; Operating Range: AUTOMOTIVE ; Operating Temperature:.

K4T56163QN-HCE6T : IC,SDRAM,DDR,4X4MX16,CMOS,BGA,84PIN,PLASTIC. s: Memory Category: DRAM Chip.

M95128-WMN3/PC : 16K X 8 SPI BUS SERIAL EEPROM, PDSO8. s: Density: 131 kbits ; Number of Words: 16 k ; Bits per Word: 8 bits ; Bus Type: Serial ; Production Status: Full Production ; Data Rate: 5 MHz ; Logic Family: CMOS ; Supply Voltage: 5V ; Package Type: 0.150 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SON-8 ; Pins: 8 ; Operating Range: AUTOMOTIVE ; Operating.

W971GG6IB-18 : 32M X 16 DDR DRAM, 0.35 ns, PBGA84. s: Memory Category: DRAM Chip ; Density: 536871 kbits ; Number of Words: 32000 k ; Bits per Word: 16 bits ; Package Type: 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84 ; Pins: 84 ; Logic Family: CMOS ; Supply Voltage: 1.8V ; Access Time: 0.3500 ns ; Operating Temperature: 0 to 85 C (32 to 185 F).

0-C     D-L     M-R     S-Z