Details, datasheet, quote on part number: TMS28F400BZB90BDBJL
CategoryMemory => Flash
Descriptionti TMS28F400BZB, 262 144 BY 16-Bit, 524 288 BY 8-Bit Boot-block Flash Memory
CompanyTexas Instruments, Inc.
DatasheetDownload TMS28F400BZB90BDBJL datasheet


Features, Applications

by 8 Bits by 16 Bits Array-Blocking Architecture Two 8K-Byte Parameter Blocks One 96K-Byte Main Block Three 128K-Byte Main Blocks One 16K-Byte Protected Boot Block Top or Bottom Boot Locations All Inputs / Outputs TTL Compatible Maximum Access/Minimum Cycle Time VCC (x = top (T) or bottom (B) boot-block configuration ordered) 10 000 Program/Erase-Cycles Two Temperature Ranges Commercial. 70C Extended. to 85C Low Power Dissipation ( VCC ) Active Write. mW ( Byte Write) Active Read. mW ( Byte Read) Active Write. mW ( Word Write) Active Read. mW ( Word Read) Block Erase. mW Standby. 0.55 mW (CMOS-Input Levels) Deep Power-Down Mode. 0.0066 mW Fully Automated On-Chip Erase and Word / Byte-Program Operations Write Protection for Boot Block Industry Standard Command State Machine (CSM) Erase Suspend/Resume Algorithm-Selection Identifier

PIN NOMENCLATURE A17 BYTE NC RP VCC VPP VSS W Address Inputs Byte Enable Data In / Out Data In / Out (word-wide mode), Low-Order Address (byte-wide mode) Chip Enable Output Enable No Internal Connection Reset / Deep Power Down 5-V Power Supply 12-V Power Supply for Program / Erase Ground Write Enable


The 194 304-bit), boot-block flash memory that can be electrically block-erased and reprogrammed. The TMS28F400BZx is organized in a blocked architecture consisting of one 16K-byte protected boot block, two 8K-byte parameter blocks, one 96K-byte main block, and three 128K-byte main blocks. The device can be ordered with either a top or bottom boot-block configuration. Operation 256K-word (16-bit) organization is user-definable.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Embedded program and block-erase functions are fully automated by an on-chip write state machine (WSM), simplifying these operations and relieving the system microcontroller of these secondary tasks. WSM status can be monitored by the on-chip status register to determine progress of program / erase tasks. The device features user-selectable block erasure. The TMS28F400BZx flash memory is offered a 44-pin PSOP. It is available in two temperature ranges: to 70C and to 85C.

80 B DBJ L Temperature Range Designator to 85C Package Designator DBJ = Plastic Small-Outline Package

Boot Block Location Indicator T = Top Location B = Bottom Location
Data Register Identification Register Output Multiplexer Status Register
Y Gating / Sensing 8K-Byte Parameter Block 96K-Byte Main Block 128K-Byte Main Block

The TMS28F400BZx uses a blocked architecture to allow independent erasure of selected memory blocks. The block to be erased is selected by using any valid address within that block. block memory maps The TMS28F400BZx is available with the block architecture mapped in either of two configurations: the boot block located at the top or at the bottom of the memory array, as required by different microprocessors. The TMS28F400BZB (bottom boot block ) is mapped with the 16K-byte boot block located at the low-order address range to 01FFFh). The TMS28F400BZT (top boot block ) is inverted with respect to the TMS28F400BZB (bottom boot block) since the boot block is located at the high-order address range to 3FFFFh). Both of these address ranges are for word-wide mode. Figure 1 and Figure 2 show the memory maps for these configurations.


Some Part number from the same manufacture Texas Instruments, Inc.
TMS28F512A 65 536 BY 8-bit Flash Memory
TMS28F512A-10C4FML ti TMS28F512A, 65 536 BY 8-Bit Flash Memory
TMS28F512A-12C3 65 536 BY 8-bit Flash Memory
TMS28F512A-12C4FML ti TMS28F512A, 65 536 BY 8-Bit Flash Memory
TMS28F512A-15C3 65 536 BY 8-bit Flash Memory
TMS28F512A-15C4FML ti TMS28F512A, 65 536 BY 8-Bit Flash Memory
TMS28F512A-17C3 65 536 BY 8-bit Flash Memory
TMS28F800ALB10BDCDE ti TMS28F800ALB, 1 048 576 BY 8-Bit, 524 288 BY 16-Bit Autoselect Boot Block Flash Memory
TMS28F800ALT12BDCDE ti TMS28F800ALT, 1 048 576 BY 8-Bit, 524 288 BY 16-Bit Autoselect Boot Block Flash Memory
TMS29F002 262 144 BY 8-bit Flash Memory
TMS29F002RB-10BFML ti TMS29F002RB, 262 144 BY 8-Bit Boot Block Flash Memory
TMS29F002RT-10BFML ti TMS29F002RT, 262 144 BY 8-Bit Boot Block Flash Memory
TMS29F010 131 072 BY 8-bit Flash Memory
TMS29F010-12C5FME ti TMS29F010, 1 048 576-Bit Flash Memory
TMS29F010-15 131 072 BY 8-bit Flash Memory
TMS29F010-70C5FME ti TMS29F010, 1 048 576-Bit Flash Memory
TMS29F040 524 288 BY 8-bit Flash Memory
TMS29F040-10C5DDE ti TMS29F040, 4 194 304-Bit Flash Memory
TMS29F400 524 288 BY 8-bit/262 144 BY 16-bit Flash Memory
TMS29LF008B ti TMS29LF008B, 8 388 608-Bit Boot-sector Flash Memories
Same catergory

225A833 : 128K X 32 Radiation Hardened Static RAM MCM 5 V. Other Read/Write Cycle Times to 125C) SMD Number Pending Asynchronous Operation CMOS or TTL Compatible I/O Single 10% Power Supply Low Operating Power Packaging Options 64-Lead Dual Flat Pack x 0.900") Radiation Fabricated with Bulk CMOS 0.5 m Process Total Dose Hardness through 1x106 rad(Si) Neutron Hardness through 1x1014 N/cm2 Dynamic and Static.

24LC128EP : 128k i 2 C CMOS Serial EePROM. Low power CMOS technology - Maximum write current 5.5V - Maximum read current 5.5V - Standby current 100 nA typical 5.5V 2-wire serial interface bus, I2C compatible Cascadable for up to eight devices Self-timed ERASE/WRITE cycle 64-byte page-write mode available 5 ms max write-cycle time Hardware write protect for entire array Output slope control to eliminate.

AS4LC4M16 : . Single +3.3V 0.3V power supply. Industry-standard x16 pinout, timing, functions, and package. 12 row, 10 column addresses High-performance CMOS silicon-gate process All inputs, outputs and clocks are LVTTL-compatible Extended Data-Out (EDO) PAGE MODE access 4,096-cycle CAS\-BEFORE-RAS\ (CBR) REFRESH distributed across 64ms Optional self refresh (S) for low-power.

HYM71V32755ALT8-8 : ->Unbuffered DIMM. based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh The Hynix HYM71V32755AT8 Series are 32Mx72bits ECC Synchronous DRAM Modules. The modules are composed of eighteen 16Mx8bits CMOS Synchronous DRAMs 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package a 168pin glass-epoxy printed circuit board. One 0.22uF and one 0.0022uF decoupling.

IDT72V3656 : 3.3v CMOS Triple Bus Syncfifo (tm) With Bus-matching. 3.3 VOLT CMOS TRIPLE BUS SyncFIFOTM WITH BUS-MATCHING x 2 Memory storage capacity: x 2 Clock frequencies to 100 MHz (6.5ns access time) Two independent FIFOs buffer data between one bidirectional 36-bit port and two unidirectional 18-bit ports (Port C receives and Port B transmits) 18-bit (word) and 9-bit (byte) bus sizing of 18 bits (word) on Ports.

K6R1008C1B : Fast SRAM. = K6R1008C1B 128K X 8 Bit High-speed CMOS Static RAM ;; Organization = 128Kx8 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 8,10,12 ;; Operating Temperature = C ;; Operating Current(mA) = 160 ;; Standby Current(mA) = 10 ;; Package = 32SOJ,32TSOP2 ;; Production Status = Eol ;; Comments = -.

M13L128168A : Org. = 8MbX16 ;; = DDR 3.3V ;; Refresh = ;; Speed/ Clock Freq. = 275/250/200 MHZ ;; Package = 66-TSOPII.

M27C202-100B1TR : 2 Mbit 128kb X16 uv EPROM And OTP EPROM. 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER CONSUMPTION: Active Current 5MHz Standby Current 100A PROGRAMMING VOLTAGE: 0.25V PROGRAMMING TIME: 100s/word ELECTRONIC SIGNATURE Manufacturer Code: 20h Device Code: 1Ch The a 2 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable).

MIC : Application Specific Standard. Serial Access EePROM Module Compatible With The DV (DIGITAL VIDEO) Standard.

MSM27C402CZ : 512k X 8 / 256k X 16 OTP ROM. The a 4Mbit electrically Programmable Read-Only Memory whose configuration can be electrically switched between 262,144 word x 16bit and 524,288 word x 8bit. The MSM27C40 2CZ operates on a single - 5V power supply and is TTL compatible. Since the MSM27C402 CZ operates asynchronously , external clocks are not required , making this device easy-to-use.

IS41LV8200A : 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE The ISSI IS41LV8200A is 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word. These make the IS41LV8200A.

K4B4G0846B-HCF8 : DDR DRAM. s: Memory Category: DRAM Chip. SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND S WITHOUT NOTICE. Products and s discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung.

K5S3216Y0M-T010 : SPECIALTY MEMORY CIRCUIT, PBGA69. s: Density: 33554 kbits ; Number of Words: 2000 k ; Bits per Word: 16 bits ; Package Type: 9 X 12.50 MM, TBGA-69 ; Pins: 69 ; Supply Voltage: 3V ; Operating Temperature: -25 to 85 C (-13 to 185 F).

M485L2829BT0-CA2 : 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA200. s: Memory Category: DRAM Chip ; Density: 9663676 kbits ; Number of Words: 128000 k ; Bits per Word: 72 bits ; Package Type: SODIMM-200 ; Pins: 200 ; Supply Voltage: 2.5V ; Access Time: 0.7500 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

WMF128K8-120CLS5 : 128K X 8 FLASH 5V PROM, 120 ns, CQCC32. s: Memory Category: Flash, PROM ; Density: 1049 kbits ; Number of Words: 128 k ; Bits per Word: 8 bits ; Package Type: CERAMIC, LCC-32 ; Pins: 32 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 120 ns ; Operating Temperature: -55 to 125 C (-67 to 257 F).

0-C     D-L     M-R     S-Z