Details, datasheet, quote on part number: TMS28F512A-12C3
PartTMS28F512A-12C3
CategoryMemory => ROM => EEPROM => Parallel => 512 Kb
Title512 Kb
Description65 536 BY 8-bit Flash Memory
CompanyTexas Instruments, Inc.
DatasheetDownload TMS28F512A-12C3 datasheet
  

 

Features, Applications

Organization. by 8 Bits All Inputs / Outputs TTL-Compatible VCC Tolerance 10% Maximum Access / Minimum Cycle Time 170 ns Industry-Standard Programming Algorithm 10 000 and 1 000 Program / Erase Cycles Latchup Immunity mA on all Input and Output Lines Low Power Dissipation ( VCC ) Active Write. mW Active Read. mW Electrical Erase. mW Standby. 0.55 mW (CMOS-Input Levels) Automotive Temperature Range to 125C

PIN NOMENCLATURE G NC VCC VPP VSS W Address Inputs (programming) / Outputs Chip Enable Output Enable No Internal Connection 5-V Power Supply 12-V Power Supply Ground Write Enable

description

The TMS28F512A Flash memory (524 288-bit), programmable read-only memory that can be electrically bulk-erased and reprogrammed. It is available 10 000 and 1 000 program / erase endurance cycle versions. The TMS28F512A is offered a 32-lead plastic leaded chip-carrier package with 1,25-mm (50-mil) lead spacing (FM suffix). The TMS28F512A is characterized for operation in temperature ranges to 70C (FML suffix), 85C ( FME suffix), and 125C ( FMQ suffix).

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Package Designator FM = Plastic Leaded Chip Carrier

This symbol is in accordance with ANSI / IEEE Std 91-1984 and IEC Publication 617-12. Pin numbers shown are for the N package.


 

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