Details, datasheet, quote on part number: TMS29F040-12C5FME
CategoryMemory => Flash
Descriptionti TMS29F040, 4 194 304-Bit Flash Memory
CompanyTexas Instruments, Inc.
DatasheetDownload TMS29F040-12C5FME datasheet
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Features, Applications

V See / TMS29VF040 Data Sheet (Literature Number V See / TMS29VF040 Data Sheet Organization. By 8 Bits Eight Equal Sectors of 64K Bytes Any Combination of Sectors Can Be Erased Any Combination of Sectors Can Be Marked as Read-Only Compatible With JEDEC Electrically Erasable Programmable Read-Only Memory (EEPROM) Command Set Fully Automated On-Chip Erase and Byte-Program Operations 100 000 Program / Erase Cycles Erase-Suspend/ Erase-Resume Operation Compatible With JEDEC Byte-Wide Pinouts Low-Current Consumption Active Read. 20 mA Typical Active Program / Erase. 30 mA Typical All Inputs/Outputs TTL-Compatible

PIN NOMENCLATURE E G VCC VSS W Address Inputs (programming) / Outputs Chip Enable Output Enable 5-V Power Supply Ground Write Enable


The (4194304-bit), 5-V single-supply, programmable read-only memory that can be electrically erased and reprogrammed. This device is organized as eight independent 64K-byte sectors and is offered with access times between 60 ns and 120 ns. An on-chip state machine controls the program and erase operations. The embedded byte-program and sector / chip-erase functions are fully automatic. The command set is compatible with that of JEDEC 4M-bit EEPROMs. A suspend / resume feature allows access to unaltered memory sectors during a sector-erase operation. Data-protection of any sector combination is accomplished using a hardware sector-protection feature. Device operations are selected by writing JEDEC-standard commands into the command register using standard microprocessor write timings. The command register acts as input to an internal-state machine that interprets the commands, controls the erase and programming operations, and outputs the status of the device, the data stored in the device, and the device algorithm-selection code. On initial power-up operation, the device defaults to the read mode. The TMS29F040 is offered a 32-pin plastic leaded chip carrier (FM suffix) using 1.27-mm (50-mil) lead pitch and a 32-pin thin small-outline package (DD suffix).

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Temperature Range Designator L = Commercial E = Extended 85C ) Package Designator FM = Plastic Leaded Chip Carrier DD = Thin Small-Outline Package

Command Register W Erase-Voltage Generator Program-Voltage Generator Data Latch


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