Details, datasheet, quote on part number: TMS29LF800B
CategoryMemory => Flash
Descriptionti TMS29LF800B, 8 388 608-Bit Boot-sector Flash Memo
CompanyTexas Instruments, Inc.
DatasheetDownload TMS29LF800B datasheet


Features, Applications

Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation Organization By 8 Bits By 16 Bits Array-Blocking Architecture One 16K-Byte/One 8K-Word Boot Sector Two 8K-Byte/4K-Word Parameter Sectors One 32K-Byte/16K-Word Sector Fifteen 64K-Byte/32K-Word Sectors Any Combination of Sectors Can Be Erased. Supports Full-Chip Erase Any Combination of Sectors Can Be Marked as Read-Only Boot-Code Sector Architecture T = Top Sector B = Bottom Sector Protection Hardware Protection Method That Disables Any Combination of Sectors From Write or Erase Operations Using Standard Programming Equipment Embedded Program/Erase Algorithms Automatically Pre-Programs and Erases Any Sector Automatically Programs and Verifies the Program Data at Specified Address JEDEC Standards Compatible With JEDEC Byte Pinouts Compatible With JEDEC EEPROM Command Set Fully Automated On-Chip Erase and Program Operations 100 000 Program/Erase Cycles Low Power Dissipation 20-mA Typical Active Read for Byte Mode 28-mA Typical Active Read for Word Mode 30-mA Typical Program/Erase Current Less Than 60-A Standby Current A in Deep Power-Down Mode All Inputs/Outputs TTL-Compatible

PIN NOMENCLATURE A[0:18] BYTE OE NC RESET / BY VCC VSS WE Address Inputs Byte/Word Enable Data In / Data out Data In/Out (Word-Wide mode) Low-Order Address (Byte-Wide mode) Chip Enable Output Enable No Internal Connection Reset / Deep Power Down Ready / Busy Output Power Supply Ground Write Enable

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCT PREVIEW information concerns products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to change or discontinue these products without notice.

Erase Suspend/Resume Supports Reading Data From, or Programming Data to, a Sector Not Being Erased Hardware-Reset Pin Initializes the Internal-State Machine to the Read Operation Package Options 44-Pin Plastic Small-Outline Package (PSOP) (DBJ Suffix) 48-Pin Thin Small-Outline Package (TSOP) (DCD Suffix) Detection Of Program/Erase Operation Data Polling and Toggle Bit Feature of Program/Erase Cycle Completion Hardware Method for Detection of Program/Erase Cycle Completion Through Ready/Busy (RY/BY) Output Pin High-Speed Data Access at 3.3-V VCC 10% at Three Temperature Ranges 90 ns Commercial. 100 ns Extended. 120 ns Automotive. to 125C


The 608-bit), 3-V single-supply, programmable read-only memory device that can be electrically erased and reprogrammed. This device is organized by 8 bits by 16 bits, divided into 19 sectors: One 16K-byte/8K-word boot sector Two 8K-byte/4K-word sectors One 32K-byte/16K-word sector Fifteen 64K-byte/32K-word sectors

Any combination of sectors can be marked as read-only or erased. Full-chip erasure is also supported. Sector data protection is afforded by methods that can disable any combination of sectors from write or read operations using standard programming equipment. An on-chip state machine provides an on-board algorithm that automatically pre-programs and erases any sector before it automatically programs and verifies program data at any specified address. The command set is compatible with that of the Joint Electronic Device Engineering Council (JEDEC) standards and is compatible with the JEDEC 8M-bit electrically erasable, programmable read-only memory (EEPROM) command set. A suspend/resume feature allows access to unaltered memory blocks during a section-erase operation. All outputs of this device are TTL-compatible. Additionally, an erase/suspend/resume feature supports reading data from, or programming data to, a sector that is not being erased.


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