Details, datasheet, quote on part number: TMS29LF800T
CategoryMemory => Flash
Descriptionti TMS29LF800T, 8 388 608-Bit Flash Memories
CompanyTexas Instruments, Inc.
DatasheetDownload TMS29LF800T datasheet


Features, Applications

Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation Organization By 8 Bits By 16 Bits Array-Blocking Architecture One 16K-Byte/One 8K-Word Boot Sector Two 8K-Byte/4K-Word Parameter Sectors One 32K-Byte/16K-Word Sector Fifteen 64K-Byte/32K-Word Sectors Any Combination of Sectors Can Be Erased. Supports Full-Chip Erase Any Combination of Sectors Can Be Marked as Read-Only Boot-Code Sector Architecture T = Top Sector B = Bottom Sector Protection Hardware Protection Method That Disables Any Combination of Sectors From Write or Erase Operations Using Standard Programming Equipment Embedded Program/Erase Algorithms Automatically Pre-Programs and Erases Any Sector Automatically Programs and Verifies the Program Data at Specified Address JEDEC Standards Compatible With JEDEC Byte Pinouts Compatible With JEDEC EEPROM Command Set Fully Automated On-Chip Erase and Program Operations 100 000 Program/Erase Cycles Low Power Dissipation 20-mA Typical Active Read for Byte Mode 28-mA Typical Active Read for Word Mode 30-mA Typical Program/Erase Current Less Than 60-A Standby Current A in Deep Power-Down Mode All Inputs/Outputs TTL-Compatible

PIN NOMENCLATURE A[0:18] BYTE OE NC RESET / BY VCC VSS WE Address Inputs Byte/Word Enable Data In / Data out Data In/Out (Word-Wide mode) Low-Order Address (Byte-Wide mode) Chip Enable Output Enable No Internal Connection Reset / Deep Power Down Ready / Busy Output Power Supply Ground Write Enable

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCT PREVIEW information concerns products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to change or discontinue these products without notice.

Erase Suspend/Resume Supports Reading Data From, or Programming Data to, a Sector Not Being Erased Hardware-Reset Pin Initializes the Internal-State Machine to the Read Operation Package Options 44-Pin Plastic Small-Outline Package (PSOP) (DBJ Suffix) 48-Pin Thin Small-Outline Package (TSOP) (DCD Suffix) Detection Of Program/Erase Operation Data Polling and Toggle Bit Feature of Program/Erase Cycle Completion Hardware Method for Detection of Program/Erase Cycle Completion Through Ready/Busy (RY/BY) Output Pin High-Speed Data Access at 3.3-V VCC 10% at Three Temperature Ranges 90 ns Commercial. 100 ns Extended. 120 ns Automotive. to 125C


The 608-bit), 3-V single-supply, programmable read-only memory device that can be electrically erased and reprogrammed. This device is organized by 8 bits by 16 bits, divided into 19 sectors: One 16K-byte/8K-word boot sector Two 8K-byte/4K-word sectors One 32K-byte/16K-word sector Fifteen 64K-byte/32K-word sectors

Any combination of sectors can be marked as read-only or erased. Full-chip erasure is also supported. Sector data protection is afforded by methods that can disable any combination of sectors from write or read operations using standard programming equipment. An on-chip state machine provides an on-board algorithm that automatically pre-programs and erases any sector before it automatically programs and verifies program data at any specified address. The command set is compatible with that of the Joint Electronic Device Engineering Council (JEDEC) standards and is compatible with the JEDEC 8M-bit electrically erasable, programmable read-only memory (EEPROM) command set. A suspend/resume feature allows access to unaltered memory blocks during a section-erase operation. All outputs of this device are TTL-compatible. Additionally, an erase/suspend/resume feature supports reading data from, or programming data to, a sector that is not being erased.


Some Part number from the same manufacture Texas Instruments, Inc.
TMS29VF040 ti TMS29VF040, 4 194 304-BIT Flash Memory
TMS320 Floating-point Digital Signal Processors
TMS32020 Wide-band Analog Interface Circuit
TMS320A2400 Floating-point Digital Signal Processors
TMS320BC51 Tms320c5x Fixed Point DSP
TMS320BC51PQ ti TMS320BC51, Digital Signal Processors
TMS320BC52 Tms320c5x Fixed Point DSP
TMS320BC52PJ ti TMS320BC52, Digital Signal Processors
TMS320BC53 Tms320c5x Fixed Point DSP
TMS320BC53PQ ti TMS320BC53, Digital Signal Processor
TMS320BC53S Tms320c5x Fixed Point DSP
TMS320BC53SPZ ti TMS320BC53S, Digital Signal Processor
TMS320BC57S Tms320c5x Fixed Point DSP
TMS320BC57SPGE57 ti TMS320BC57S, Digital Signal Processors
TMS320C10 Tms320c1x Fixed Point DSP
TMS320C10FNA ti TMS320C10, Digital Signal Processor
TMS320C10M Tms320c1x Fixed Point DSP
TMS320C10NA ti TMS320C10, Digital Signal Processor
TMS320C14 Tms320c1x Fixed Point DSP
TMS320C14FNL ti TMS320C14, Digital Signal Processors
TMS320C15 Tms320c1x Fixed Point DSP

5962-9755901QRA : Inverting Buffers and Drivers ti SN54AS244A, Octal Buffers And Line Drivers With 3-State Outputs

CD54ACT244 : Bus Oriented Circuits

RC4580IPWR : Dual Audio Operational Amplifier

SN74AUC2G241 : Dual Buffer/driver With 3-State Outputs

SN74V3660-7PEU : 4096 X 36 Synchronous Fifo Memory

7BT2L3A-364 : HIGH Capacity Environmentally Sealed

TL431BQDBVTE4 : Adjustable Precision Shunt Regulators

SN65LVCP23DG4 : 2x2 Crosspoint Switch : Lvpecl Outputs

LMV358IPWRE4 : Linear - Amplifier - Instrumentation, Op Amps, Buffer Amp Integrated Circuit (ics) General Purpose Tape & Reel (TR) 210A 2.7 V ~ 5.5 V, 1.35 V ~ 2.75 V; IC OPAMP GP R-R 1MHZ DUAL 8TSSOP Specifications: Packaging: Tape & Reel (TR) ; Amplifier Type: General Purpose ; Number of Circuits: 2 ; Package / Case: 8-TSSOP (0.173", 4.40mm Width) ; Slew Rate: 1 V/s ; Gain Bandwidth Product: 1MHz ; Current - Supply: 210A ; Current - Output / Channel: 160mA ; Voltage - Supply, Single/Dual

Same catergory

A28F010 : 1M. 1024k CMOS Flash Memory (automotive): 128kx8. Automotive Temperature Range 125 C Flash Memory Electrical Chip-Erase 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 1 000 Erase Program Cycles Minimum over Automotive Temperature Range g 5% VPP High-Performance Read 120 ns Maximum Access Time CMOS Low Power Consumption 30 mA Maximum Active.

HM628511H : 4m High Speed SRAM ( 512-kword X 8-bit ). The HM628511H Series a 4-Mbit high speed static RAM organized 512-k word 8-bit. It has realized high speed access time by employing CMOS process + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache.

KMMR16R88C1 : Normal RIMM. = KMMR16R88C1 8d RIMM(TM) Module With 128Mb Rdrams ;; Density(MB) = 128 ;; Organization = 64Mx16 ;; Component Composition = 8 ;; Voltage(V) = 2.5 ;; Refresh = 16K/32m(1.9us) ;; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ;; #of Pin = 184 ;; Production Status = Eol ;; Comments = Non-ecc.

M34C02 : Application Specific Standard. 2 Kbit Serial I²C Bus EePROM For Dimm Serial Presence Detect.

MT5LSDT1672 : 168-Pin Sdram Dimms, Unbuffered, (x72). PC100- and PC133-compliant JEDEC-standard, 168-pin, dual in-line memory module (DIMM) Unbuffered 32MB (4 Meg 64MB (8 Meg 128MB (16 Meg x 72) ECC-Optimized Pinout Single +3.3V 0.3V power supply Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can be changed every clock cycle Internal.

NT256D64S88B1G-5 : 184 pin Unbuffered DIMM. 32M X 64, SS, 2.6V, 32 X 8, (8), 1, PC3200-2.5-3-31,.

NT256D72S89ABG-75T : 184 pin Unbuffered DIMM. 32M X 72, SS, 2.5V, Ecc, 32 X 8, (9), 1, PC2100-2-2-2.

P3C1024 : SRAM. Org = 128K X 8 ;; . = Common I/O, 3.3V ;; ;; Taa (ns) = 15 to 35 ;; Package / Pins Dip = 32 ;; Package / Pins Soj = 32 ;; Package / Pins Soic / Sop =.

uPD45128163 : . The PD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as (word bit bank). The synchronous DRAM achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous DRAM is compatible with Low Voltage TTL (LVTTL).

A29L040A : 512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory The A29L040A is a 3.0 volt-only Flash memory organized as 524,288 bytes of 8 bits each. The 512 Kbytes of data are further divided into eight sectors of 64 Kbytes each for flexible sector erase capability. The 8 bits of data appear on I/O0 - I/O7 while the addresses are input on A0 to A18.

CYD09S18V-133BBXC : 512K X 18 DUAL-PORT SRAM, 4.7 ns, PBGA256. s: Memory Category: SRAM Chip ; Density: 9437 kbits ; Number of Words: 512 k ; Bits per Word: 18 bits ; Package Type: 17 X 17 MM, 1 MM PITCH, LEAD FREE, FBGA-256 ; Pins: 256 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 4.7 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

GS832418B-166T : 2M X 18 CACHE SRAM, 8.5 ns, PBGA119. s: Memory Category: SRAM Chip ; Density: 37749 kbits ; Number of Words: 2000 k ; Bits per Word: 18 bits ; Package Type: BGA, 14 X 22 MM, 1.27 MM PITCH, BGA-119 ; Pins: 119 ; Supply Voltage: 2.5V ; Access Time: 8.5 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

IDT71682LA12D : 4K X 4 STANDARD SRAM, 12 ns, CDIP24. s: Memory Category: SRAM Chip ; Density: 16 kbits ; Number of Words: 4 k ; Bits per Word: 4 bits ; Package Type: 0.300 INCH, CERDIP-24 ; Pins: 24 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 12 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

K9F2G08U0C-SCB00 : 256M X 8 FLASH 3.3V PROM, PDSO48. s: Memory Category: Flash, PROM ; Density: 2147484 kbits ; Number of Words: 256000 k ; Bits per Word: 8 bits ; Package Type: TSOP, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 ; Pins: 48 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Operating Temperature: 0 to 70 C (32 to 158 F).

MR25H40CDF : SPECIALTY MEMORY CIRCUIT. No write delays Unlimited write endurance Data retention greater than 20 years Automatic data protection on power loss Fast, simple SPI interface with to 40 MHz clock rate to 3.6 Volt power supply range Low current sleep mode Industrial temperatures Available in 8-pin DFN or 8-pin DFN Small Flag RoHS-compliant packages. Direct replacement for serial.

0-C     D-L     M-R     S-Z