Details, datasheet, quote on part number: BWD
DescriptionAluminum Housed Wirewound Resistors, Anodized Aluminum Casing to Utilize Heat-sink Effect, Self-protecting, Short Circuit Proof, Protection According to ip 54
CompanyVishay Intertechnology
DatasheetDownload BWD datasheet


Features, Applications


Wirewound resistor with high power rating Anodized aluminum casing to utilize heat-sink effect Self-protecting Short circuit proof Protection according IP 54


NOTES: 1) Further values and tolerances on request 2) Rated voltage x R

PARAMETER Rated Dissipation at 70C Rated Dissipation 35% ED Limiting Element Voltage2) Insulation Voltage (1 min) Thermal Time Constant Insulation Resistance at 1000VDC Category Temperature Range Inductance Capacitance vs Housing Failure Rate Weight/1000 pieces NOTE:

TEST Endurance Test at 70C Endurance Test at UCT Overload Test Thermal Shock Damp Heat Steady State CONDITIONS OF TEST IEC 4.25.1 1000 hours at 70C IEC 4.25.3 1000 hours at 200C without load IEC 60115-1 4.13 Short time overload for 5 seconds

IEC 60115-1 4.19 IEC 68-2-14 Rapid change between upper and lower category temperature IEC 60115-1 4.24 IEC 68-2-3 56 days at 40C and 93% relative humidity For technical questions, contact


Related products with the same datasheet
Some Part number from the same manufacture Vishay Intertechnology
BWD250 Aluminum Housed Wirewound Resistors, Anodized Aluminum Casing to Utilize Heat-sink Effect, Self-protecting, Short Circuit Proof, Protection According to ip 54
BY203 Fast Avalanche Sinterglass Diode
BY228 Standard Avalanche Sinterglass Diode
BY268 Fast Avalanche Sinterglass Diode
BY448 Standard Avalanche Sinterglass Diode
BY458 Standard Avalanche Sinterglass Diode

EB652R32 : Edgeboard Connectors, Dual Readout, 0.125" [3.17mm] C-C, Standard and Right Angle Terminals

PRVS61WHF : Fully Sealed Potentiometers Cermet (prv6) Conductive Plastic (parv6)

TH3C335M035D1700 : 3.3F Tantalum Capacitor 2312 (6032 Metric) 35V; CAP TANT 3.3UF 35V 20% 2312 Specifications: Capacitance: 3.3F ; Voltage - Rated: 35V ; Tolerance: 20% ; Features: High Reliability ; Operating Temperature: -55C ~ 150C ; Lead Spacing: - ; ESR (Equivalent Series Resistance): 1.700 Ohm ; Lifetime @ Temp.: - ; Mounting Type: Surface Mount ; Type: Molded ; Package / Case: 2312

RS01A6K800FS70 : 6.8K Ohm 1W Through Hole Resistors; RES 6.8K OHM 1W 1% WW AXIAL Specifications: Resistance (Ohms): 6.8K ; Power (Watts): 1W ; Tolerance: 1% ; Packaging: Cut Tape (CT) ; Composition: Wirewound ; Temperature Coefficient: 20ppm/C ; Lead Free Status: Contains Lead ; RoHS Status: RoHS Non-Compliant

LCD-016N002V-GGF-HS : LCD DOT MATRIX CHARACTER MODULE Specifications: Display Type: Dot Matrix

LCD-020N004L-PBE-EE : LCD DOT MATRIX CHARACTER MODULE Specifications: Display Type: Dot Matrix

LCD-240H128R-WGH-V : LCD DOT MATRIX GRAPHIC DISPLAY MODULE,WHITE Specifications: Display Type: Dot Matrix

P-0502Y6651QBTS : RESISTOR, THIN FILM, 0.1 W, 0.02 %, 10 ppm, 6650 ohm, SURFACE MOUNT, 0502 Specifications: Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP ; Resistance Range: 6650 ohms ; Tolerance: 0.0200 +/- % ; Temperature Coefficient: 10 ±ppm/°C ; Power Rating: 0.1000 watts (1.34E-4 H

RS3D-HE3 : 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB Specifications: Package: LEAD FREE, PLASTIC, SMC, 2 PIN ; Number of Diodes: 1 ; VRRM: 200 volts ; IF: 3000 mA ; trr: 0.1500 ns ; RoHS Compliant: RoHS

VJ1206A0R5DNBAJ5G : CAPACITOR, CERAMIC, MULTILAYER, 100 V, C0G, 0.0000005 uF, SURFACE MOUNT, 1206 Specifications: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 5.00E-7 microF ; Capacitance Tolerance: 100 (+/- %) ; WVDC: 100 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Moun

Y00918R06000B0L : RESISTOR, METAL FOIL, 0.33 W, 0.1 %, 0.2 ppm, 8.06 ohm, THROUGH HOLE MOUNT Specifications: Category / Application: General Use ; Technology / Construction: Metal Foil ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Resistance Range: 8.06 ohms ; Tolerance: 0.1000 +/- % ; Temperature Coefficient: 0.2000 ±ppm/°C ; Power Rating: 0.3300 watts (4.42E-4 HP) ; O

Same catergory

60CPQ150 : Schottky Rectifier, Package : TO-3P.

ATAR092-C : MARC4 Architecture. Low-current Microcontroller For Wireless Communication, Tamb up to 105 C.

CY62146CV30 : 256K X 16 Static RAM. High speed: 55 ns and 70 ns availability Voltage range: 3.3V Pin compatible with CY62146V Ultra-low active power Typical active current: 1.5 mA MHz Typical active current: f = fmax (70 ns speed) Low standby power Easy memory expansion with CE and OE Automatic power-down when deselected CMOS for optimum speed/power power consumption by 80% when addresses.

DCR1675SZ : 3803a 5200v Disc Phase Control Thyristor. s Double Side Cooling s High Surge Capability s High Mean Current s Fatigue Free KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 1000V/s 300A/s APPLICATIONS s High Power Drives s High Voltage Power Supplies s DC Motor Control Type Number Repetitive Peak Voltages VDRM VRRM V Conditions Tvj to 125C, IDRM = IRRM = 500mA, VDRM, VRRM = 10ms, VDSM & VRSM = VDRM.

MC10109FN : Dual 4-5-Input Or/nOR GATE , Package: Plcc, Pins=20. The is a dual 45 input OR/NOR gate. 30 mW typ/gate (No Load) tpd 2.0 ns typ tr, 2.0 ns typ (20%80%) VCC1 AOUT AIN VEE VCC2 BOUT BIN WW = Assembly Location = Wafer Lot = Year = Work Week Device MC10109P MC10109FN Package PDIP16 PLCC20 Shipping 25 Units / Rail 25 Units / Rail 46 Units / Rail Pin assignment is for DualinLine Package. For PLCC pin assignment,.

MGFC5109 : GaAs. Ka-band 3-stage Self Bias Noise Amplifier. Notice : This is not a final Some parametric limits are subject to change. The is a GaAs MMIC chip especially designed for ~ 30.0 GHz band Low Noise Amplifier.(LNA). Symbol Id Vg Pin Ta Drain bias voltage Drain bias current Gate bias voltage Maximum peak input power overdrive (Duration < 1sec) Operating temperature range Parameter Values 3 30 Unit.

TC74LCX646FS : TC74LCX Series. Function = Octal Bus Transceiver/register ;; Pins = 24 ;; Additional Information = More Info.

TC7WT241FU : Non-inverted, 3-state Output.

THSMCJ1022C : Thyristor Surge Suppressor. Bi-Directional 100 AMP Thyristor Surge Protective Devices (TSPD) Bidirectional Transient Voltage Protection Initial Breakdown Voltage to 275 volts Positive Resistance Breakover Voltages to 350 volts maximum Clamping speeds of nanoseconds High Off-State Impedance (low leakage) and low on-state voltage (crowbar action) Encapsulating material meets UL94V-O.

KS0104 : CMOS Digital Intergrated Circuit.

DER-45 : 1.8W Non-isolated Power Supply Using Lnk304. Title Application Author Document Number Date Revision This report lists a design for a single output offline non-isolated power supply for white goods low cost applications. Highly integrated solution Lowest possible component count No optocoupler or zener diode required for regulation Integrated thermal overload protection with automatic recovery.

BA25BC0FP : 1.0A Low-dropout Voltage Regulator with Shut down Switch.

ECCM62 : Ceramic Surface Mount Crystal. To all concerned parties, This bulletin is to notify all customers of the discontinuation of the ECCM62 series Ecliptek crystal effective Saturday, April 2000. In compliance with our End of Life (EOL) policy, this notice will serve as advanced notice of product termination. New orders will not be accepted after Saturday, July 01, 2000, with delivery.

SMBJ18CA : TVS Diodes - Transient Voltage Suppressors 18volts 5uA 20.5 Amps Bi-Dir. Bourns SMxJ TVS Diode s come in compact chip package-size formats for surge and ESD protection applications. These Bourns Transient Voltage Suppressor Diode s meet the needs of the portable communications, computing, and video equipment markets for increasingly smaller electronic.

AD7376ARUZ10 : IC, DIGITAL POT 10KOHM, 128 SGL 14-TSSOP. s: End To End Resistance: 10kohm ; Track Taper: - ; Resistance Tolerance: 30% ; No. of Steps: 128 ; Supply Voltage Range: 4.5V to 33V, 4.5V to 16.5V ; Control Interface: Serial, SPI ; No. of Pots: Single ; Temperature Coefficient: 35ppm/C ; Potentiometer IC Case Style: TSSOP ; No. of Pins: 14 ; Operating.

NZH20C,115 : Diode - Zener - Single Discrete Semiconductor Product 40nA @ 15V 20V 500mW Surface Mount; DIODE ZENER 500MW 20V SOD123. s: Voltage - Zener (Nom) (Vz): 20V ; Power - Max: 500mW ; Impedance (Max) (Zzt): 28 Ohm ; Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA ; Current - Reverse Leakage @ Vr: 40nA @ 15V ; Tolerance: - ; Mounting Type: Surface Mount ; Package.

KSA1370EBU : Transistor (bjt) - Single Discrete Semiconductor Product 100mA 200V 1W PNP; TRANSISTOR PNP 200V 100MA TO-92L. s: Transistor Type: PNP ; Voltage - Collector Emitter Breakdown (Max): 200V ; Current - Collector (Ic) (Max): 100mA ; Power - Max: 1W ; DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V ; Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA.

0-C     D-L     M-R     S-Z