Details, datasheet, quote on part number: 2SA1189
CategoryDiscrete => Transistors => Bipolar => Audio Amplifier Application => PNP
DescriptionSilicon PNP Epitaxial
CompanyHitachi Semiconductor (acquired by Renesas)
DatasheetDownload 2SA1189 datasheet
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Features, Applications


Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO PC Tj Tstg to +150 Unit mW C

2SA1188 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current trnsfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE*

Gain bandwidth product f T Collector output capacitance Cob
Maximum Collector Dissipation Curve Collector power dissipation Pc (mW) 600


Some Part number from the same manufacture Hitachi Semiconductor (acquired by Renesas)
2SA1193 Silicon PNP Epitaxial, Darlington
2SA1194 Silicon PNP Epitaxial
2SB1032 Silicon PNP Triple Diffused
2SB1072 Silicon PNP Triple Diffused

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