The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
High Voltage H11D1, H11D2, BVCER H11D3, H11D4, BVCER 200 V High isolation voltage - 5300 VAC RMS - 1 minute - 7500 VAC PEAK - 1 minute Underwriters Laboratory (UL) recognized File# E90700
Power supply regulators Digital logic inputs