The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
MOC8204M, BVCER H11D1M, H11D2M, BVCER H11D3M, BVCER = 200V High isolation voltage: 7500 VAC peak, 1 second Underwriters Laboratory (UL) recognized File # E90700, Volume 2 IEC 60747-5-2 approved (ordering option V)
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