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Part information


This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2 / Aug. 2011 1

Revision No. History Preliminary Release tDQSQ value update DDR333 MRS Update(CL4 Setting Added) Draft Date Sep. 2009 Nov. 2009 Feb. 2011 Aug. 2011 Remark

DESCRIPTION

The H5DU5182EFR and H5DU5162EFR are a 536,870,912-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory

Part numberCircuit descriptionManufacture
H5DU5162EFR-E3C 32M X 16 DDR DRAM, 0.7 ns, PBGA60. Specifications: Memory Category: DRAM Chip ; Density: 536871 kbits ; Number of Words: 32000 k ; Bits per Word: 16 bits ; Package Type: ROHS COMPLIANT, FBGA-60 ; Pins: 60 ; Logic Family: CMOS ; Supply Voltage:
Category: Memory - Memory Chips
SK Hynix
H5DU5162EFR-E3I - -
H5DU5162EFR-E3J - -
H5DU5162EFR-E3L - -
H5DU5162EFR-FAC - -
H5DU5162EFR-FAI - -
H5DU5162EFR-FAJ - -
H5DU5162EFR-FAL - -
H5DU5162EFR-J3C - -
H5DU5162EFR-J3I - -
H5DU5162EFR-J3J - -
H5DU5162EFR-J3L - -
H5DU5162EFR-K2C - -
H5DU5162EFR-K2I - -
H5DU5162EFR-K2J - -
H5DU5162EFR-K2L - -
H5DU5162EFR-K3C - -
H5DU5162EFR-K3I - -
H5DU5162EFR-K3J - -
H5DU5162EFR-K3L - -
H5DU5162EFR-L2C - -
H5DU5162EFR-L2I - -
H5DU5162EFR-L2J - -
H5DU5162EFR-L2L - -
H5DU5162ETR-E3C - -
H5DU5162ETR-E3I - -
H5DU5162ETR-E3J - -
H5DU5162ETR-E3L - -
H5DU5162ETR-FAC - -
H5DU5162ETR-FAI - -

 

 
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