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Part number
DistributorStockDCManufactureDescription
 
1393  12  TO-220F  TOSHIBA/O  
 
13023  11/13/14  TOSHIBA  TO-220/TO-220F/TO-220SIS  
 
9688  12  TOSHIBA  TO220F  
 
6532  -  TOS  TO-220..  
 
12500  2016  TOSHIBAHIBA  -  
 
2885  14/.  TOSHIBA  TO-220F/TO220F  

 

Part information


(2) (3) Low drain-source on-resistance: RDS(ON) = 0.19 (typ.) Low leakage current: IDSS 10 ľA (max) (VDS 250 V) Enhancement mode: Vth 3.5 V (VDS = 1 mA)

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque 1.0 s) (Tc = 25) (Note 2) (Note 3) (Note 1) (Note

Part numberCircuit descriptionManufacture
TK13A25D 13 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 250 volts ; rDS(on): 0.2500 ohms ; Package Type: TO-220, ROHS COMPLIANT, 2-10U1S, SC-67, TO-220SIS, 3 PIN ; Number of units
Category: Discrete - Transistors
Electronic Technology (acquired by Micrel Semiconductor)

 

 
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