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Part number
DistributorStockDCManufactureDescription
 
6284  10  TO-220F  TOSUO  
 
5999  12  TO-220F  TOSHIBA/O  
 
54805  12  -  -  
 
18281  -  -  -  
 
5043  N/A  TOSHIBA  -  
 
5630  -  TOSHIBA  TO-220..  
 
12500  2016  TOSHIBAHIBA  -  
 
138000  2014  Toshiba Semiconductor and Storage  MOSFET N-CH 500V 13A TO-220SIS  
 
12  call,60mins feedback  -  TO-220-3 Full Pack  
 
10000  13  Toshiba  -  
 
10000  -  -  -  
 
2640  N/A  TOSHIBAN/A  -  
 
54805  12  -  -  
 
0  -  12  TOS  
 
2257  1314PB  TO-220F  TOSHIBA  
 
12500  2016  TOSHIBAHIBA  -  
 
11230  13  Toshiba  -  
 
12  call,60mins feedback  -  TO-220-3 Full Pack  
 
138000  2014  Toshiba Semiconductor and Storage  MOSFET N-CH 500V 12.5A TO-220SIS  
 
10000  -  -  -  

 

Part information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS)

Low drain-source ON resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: Yfs 7.5 S (typ.) Low leakage current: IDSS 10 A (max) (VDS 500 V) Enhancement-mode: Vth 4.0 V (VDS = 1 mA)

Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating to 150 Unit

Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage

Part numberCircuit descriptionManufacture
TK13A50DA(STA4,Q,M Fet - Single Discrete Semiconductor Product 12.5A 500V 45W Through Hole; MOSFET N-CH 500V 12.5A TO-220SIS. Specifications: Mounting Type: Through Hole ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 500V ; Current - Continuous Drain (Id) @ 25 C: 12.5A ; Rds On (Max) @ Id, Vgs: 470 mOhm
Category: Discrete Semiconductor Products
Toshiba
TK13A50D(STA4,Q,M) Fet - Single Discrete Semiconductor Product 13A 500V 45W Through Hole; MOSFET N-CH 500V 13A TO-220SIS. Specifications: Mounting Type: Through Hole ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 500V ; Current - Continuous Drain (Id) @ 25 C: 13A ; Rds On (Max) @ Id, Vgs: 400 mOhm -
TK13A50D 13 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET. Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 volts ; rDS(on): 0.4000 ohms ; Package Type: ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN ; Number of units in IC: 1
Category: Discrete - Transistors
Electronic Technology (acquired by Micrel Semiconductor)
TK13A50DA - -

 

 
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