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Part number
12500  2016  TOSHIBAHIBA  -  
10899  -  12  TOS  


Part information

Low drain-source on-resistance: RDS(ON) = 0.4 (typ.) High forward transfer admittance: |Yfs| 7.5 S (typ.) Low leakage current: IDSS 10 ľA (max) (VDS 650 V) Enhancement mode: Vth 4.0 V (VDS = 1 mA)

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Repetitive avalanche energy Channel temperature Storage temperature (Note 3) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg

Part numberCircuit descriptionManufacture
TK13A65D 13 A, 650 V, 0.47 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 650 volts ; rDS(on): 0.4700 ohms ; Package Type: TO-220, ROHS COMPLIANT, 2-10U1S, SC-67, TO-220SIS, 3 PIN ; Number of units
Category: Discrete - Transistors
Electronic Technology (acquired by Micrel Semiconductor)


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