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Part number
DistributorStockDCManufactureDescription
 
10000  2008  -  -  
 
25000  -  SGS-THOMSON  .  
 
2520  -  -  -  
 
621853  12  -  -  
 
3983  05/O3/10  ST  TO-247/TO-3P  
 
7500  2016  SGS-THOMSON  TO-3P  
 
10000  2011  ST  TO-247  
 
2080  -  -  247  
 
2080  02  ST  -  
 
524  -  ST  TO-3P  
 
15000  2015  ST  TO-247  
 
37557  -  ST  TO  
 
35000  2016  ST  TO-247  
 
19883  11/13/14  ST  TO-247/TO-3P  
 
25  12  ST MICROELECTRONICS SEMI  -  
 
498101  12  -  -  
 
12500  2016  ST  -  
 
9800  -  ST  TO  
 
10000  2008  -  -  
 
35000  -  -  TO-247  
 
523  13  ST MICROELECTRONICS SEMI  -  

 

Part information


TYPICAL RDS(on) = 0.58 EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247

DESCRIPTION The third generation of MESH OVERLAY TM Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION

Part numberCircuit descriptionManufacture
STW10NC70Z Medium Voltage. N-channel 700V 0.58OHM 10.6A TO-247 Zener-protected Powermesh Iii MOSFET
Category: Discrete - Transistors
ST Microelectronics, Inc.

 

 
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