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Part number
DistributorStockDCManufactureDescription
 
2880  -  -  -  
 
621853  12  -  -  
 
33550  2016  N/A  Original new  
 
10000  2008  -  -  
 
5006489  11/12/13  ST  TO3P/TQFP/TO-247  
 
35000  2013  N/A  Original new  
 
9000  13  STM  -  
 
15000  12  ST  TO-247  
 
2735  -  -  -  
 
498101  12  TO-220  -  
 
35000  2016  ST  TO-247  
 
11365  11/12/1310  ST  TO-247/TO247  
 
3456  2015  ST  TO-247  
 
1  0453  STM  TO-247  
 
740  2008  ST  -  
 
9800  -  ST  TO  
 
9600  12  ST  TO-247-3  
 
15  N/A  ST(10A600V)  TO-3P  
 
10000  2008  -  -  
 
35000  -  -  TO-247  
 
21518  11-12  ST  TO 247  
 
45000  2013  ST  TO 247  
 
100000  -  ST  -  
 
10000  2011  ST  TO-247  
 
38500  -  ST  TO  
 
15000  15  ST  TO-247  

 

Part information


TYPICAL RDS(on) = 0.65 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY

DESCRIPTION The SuperMESHTM series is obtained through an extreme optimization of ST's well established stripbased PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products. APPLICATIONS HIGH CURRENT,

Part numberCircuit descriptionManufacture
STW10NK60Z Medium Voltage. N-channel 600V - 0.65 Ohm - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 Zener-protected Supermesh Power MOSFET
Category: Discrete - Transistors
ST Microelectronics, Inc.
W10NK60Z N-channel 600V - 0.65ohm - 10A - I2/d2pak - To-220/fp - To-247 Zener-protected Supermesh TM Power Mosfet -

 

 
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