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Part number
DistributorStockDCManufactureDescription
 
621853  12  -  -  
 
10000  2008  -  -  
 
67888  -  ST  TO-247  
 
30  -  STM  -  
 
1000  2016  ST  TO-3P  
 
2530  -  -  -  
 
5000  -  -  3P  
 
15377  11/12/13  ST  TO-247/TO247/TO-3P  
 
9800  -  ST  TO  
 
10000  2011  ST  TO-247  
 
26  0833  ST  TO-247  
 
59  2015  ST  TO-247  
 
3452  -  ST  TO-247  
 
5000  -  -  -  
 
5000  2016  SEMTCH  -  
 
8500  11-12  ST  TO-3P  
 
423  13  ST  -  
 
35000  -  -  TO-247  
 
2000  -  -  -  
 
30  12  ST  -  
 
21167  -  ST  N/A  
 
498101  12  TO-3P  -  
 
5000  05  ST  TO-247  
 
35000  2016  ST  TO-247  
 
10000  2008  -  -  

 

Part information


TYPICAL RDS(on) = 0.047 EXTREMELY HIGH dv/dt CAPABILITY 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

DESCRIPTION Using the latest high voltage technology, STMicroelectronics has designed an advanced family of power Mosfets with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT,

Part numberCircuit descriptionManufacture
STW50NB20 Medium Voltage. N-channel 200V - 0.047 Ohm - 50A - TO-247 Powermesh MOSFET
Category: Discrete - Transistors
ST Microelectronics, Inc.

 

 
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