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Part number
DistributorStockDCManufactureDescription
 
492100  12  -  -  

 

Part information

Features

3.3Vą0.3V power supply to 133 MHz clock frequency 2,097,152 words x 4 banks x 16 bits organization Auto Refresh and Self Refresh CAS latency: 2 and 3 Burst Length: and full page Burst read, Single Writes Mode Byte data controlled by UDQM and LDQM Power-Down Mode Auto-Precharge and controlled precharge 4k refresh cycles / 64ms Interface: LVTTL Package: TSOP II 54 pin, 400 mil - 0.80

is a high speed synchronous dynamic random access memory (SDRAM) , organized as 2M words x 4 banks x 16 bits. Using pipelined architecture and 0.20um process technology, W981216AH delivers a data

Part numberCircuit descriptionManufacture
W981216AH 2m X 16 Bit X 4 Banks Sdram
Category: Memory
Winbond Electronics Corp America
W981216BH 8Mx16
Category: Memory - DRAM
Information Storage Devices, Inc
W981216BH Winbond Electronics Corp America
W981216BH-6 - -
W981216BH-7 - -
W981216BH-75 - -
W981216BH-75I Industrial Sdram -
W981216BH-75L - -
W981216BH-8H -
W981216BH75I - -
W981216BH75L - -
W981216DH -
W981216 2M x 4 Banks x 16 BIT Sdram -
W981216AH-75 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54. Specifications: Memory Category: DRAM Chip ; Density: 134218 kbits ; Number of Words: 8000 k ; Bits per Word: 16 bits ; Package Type: TSOP, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 ; Pins: 54 ; Supply Voltage:
Category: Memory - Memory Chips
Winbond Electronics Corporation America
W981216AH-8H - -
W981216BH-6 - -
W981216BH-7 - -
W981216BH-8H - -
W981216BH75I - -
W981216BH75L - -
W981216DH-6 - -
W981216DH-7 - -
W981216DH-75 - -
W981216DH-8H - -

 

 
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